Abstract:A comparative study of surge current reliability of 1200 V/5 A 4H-SiC (silicon carbide) MPS (Merged PiN Schottky) diodes with different technologies is presented. The influences of device designs in terms of electrical and thermal aspects on the forward conduction performance and surge current capability were studied. Device forward characteristics were simulated and measured. Standard single-pulse surge current tests and thermal impedance measurements were carried to show their surge capability and thermal design differences. An advanced thermal RC (thermal resistance-capacitance) model, with the consideration of current distribution non-uniformity effects, is proposed to accurately calculate the device junction temperature during surge events. It was found that a thinner substrate and a hexagonal layout design are beneficial to the improvement of the bipolar conduction performance in high current mode, as well as the surge current capability. The thinner substrate design also has advantages on thermal aspects, as it presents the lowest thermal resistance. The calculated failure temperature during the surge tests is consistent with the aluminum melting phenomenon, which is regarded as the failure mechanism. It was demonstrated that, for a SiC MPS diode, higher bipolar conduction performance is conducive to restraining the joule heat, and a lower thermal resistance design is able to accelerate the heat dissipation and limit the junction temperature during surge events. In this way, the MPS diode using a thinner substrate and advanced layout design technology is able to achieve 60% higher surge current density capability compared to the other technologies.

Single Pulse Avalanche Robustness and Analysis for 1200-V SiC Junction Barrier Schottky Diode

1200-V 4H-Sic Merged P-I-n Schottky Diodes with High Avalanche Capability

Investigation of Avalanche Capability of 1200V 4H-Sic MPS Diodes and JBS Diodes

Avalanche Robustness of 1.2kV SiC MOSFET with Integrated Junction-Barrier-Schottky Diode and Gate Leakage Current Analysis

Design and Experimental Study of 4H-Sic Trenched Junction Barrier Schottky Diodes

Influence of Cell Design and Gate-to-Source Voltage on Avalanche Robustness of SiC MOSFET Integrated JBS Diode

1.2-Kv 4H-Sic Merged PiN Schottky Diode with Improved Surge Current Capability

Comparing Hexagonal and Circular Cell Designs for SiC MPS Diode: the Curvature Effect on Avalanche Capability

Design and Experimental Study of 1.2kV 4H-SiC Merged PiN Schottky Diode

Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS

Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode with 600-V/10-A Switching Capability

Plasma Spreading Layers: an Effective Method for Improving Surge and Avalanche Robustness of SiC Devices

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations

The Impact of Process Conditions on Surge Current Capability of 1.2 Kv SiC JBS and MPS Diodes

1.4 3 Kv 4H-Sic Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm2)

3.3 Kv-Class 4H-Sic Epi-Refilled Super-Junction Diode with Repetitive Surge Current Robustness

1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow

The Impact of the Hexagonal and Circular Cell Designs on the Characteristics and Ruggedness for 4H-Sic MPS Diodes

3.3 kV 4H-SiC Trench Semi-Superjunction Schottky Diode With Improved ON-State Resistance

Design and Fabrication of 1.92 Kv 4H-Sic Super-Junction SBD with Wide-Trench Termination

Design and Fabrication of 1.2 kV/10A 4H-SiC Junction Barrier Schottky Diodes with High Current Density