Multiple P-Type SiC Micro-Island As Junction Termination Extension for 4H-Sic Schottky Barrier Diode
Xinyu Wang,Dengwen Yuan,Lingling Lai,Fanpeng Zeng,Bin Zhang,Tianlu Wang,Lei Ge,Yingxin Cui,Mingsheng Xu,Kuan Yew Cheong,Yu Zhong,Xiaobo Hu,Xiangang Xu,Jisheng Han
DOI: https://doi.org/10.1109/led.2024.3411871
IF: 4.8157
2024-01-01
IEEE Electron Device Letters
Abstract:- The letter investigated the design of junction termination extension structures with uniformly and non-uniformly distributed multiple P-type SiC micro-islands in 4H-SiC based Schottky Barrier Diode (SBD). By adjusting the length (LP), spacing (SP), number of islands (NP), and trapezoidal tilt angle (theta) of the micro-islands, the reverse performance of the devices is effectively optimized. Merging simulation with experimental methodologies, the performance of the SBD devices with varying terminal structures was analyzed. Simulation results indicate that a uniform distribution of multiple P-type micro-islands, particularly with LP = 13 mu m, SP = 3 mu m, and NP = 6, exhibits a more uniform electric field distribution under reverse voltage of 1200 V and a higher terminal efficiency (exceeding 90%), while also saving more than 19% of the terminal area if compared to the non-uniform multiple P-island configurations. Furthermore, by changing the theta, the reverse performance of SBD devices and terminal efficiency can be affected with theta = 12 degrees , producing the best outcome.