Abstract:In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors under repetitive avalanche shocks are investigated in details. With the help of Silvaco TCAD simulations, gate capacitance versus gate voltage (C-g-V-g) measurement, and three-terminal charge pumping test, the main damaged position is demonstrated to be the SiC/SiO2 interface along junction FET (JFET) region instead of the body diode where most of the avalanche current passes through. Dominant avalanche degradation mechanism is then confirmed to be the injection of holes into the gate oxide above the JFET region. Since the channel region and the main junction of body diode are not seriously damaged by the avalanche stress, static parameters all remain stable. Meanwhile, due to the injection of holes, the depletion layer beneath the JFET region gets thinner, resulting in the increase of gate-drain capacitance (C-gd) under low drain-source voltage (V-ds) bias condition. It further takes responsibilities for the increments in input capacitance (C-iss), output capacitance (C-oss), and reverse transfer capacitance (C-rss). Moreover, it results in the extension of Miller plateau. Therefore, the increase of gate charge and delay of turn-OFF time after being stressed by repetitive avalanche shocks are monitored. Moreover, turn-ON and turn-OFF dissipated energies after different unclamped-inductive-switching stress cycles are extracted. They are rarely influenced by the stress for the overlapping areas of voltage and current during switching procedures are relatively stable.

Influence of Cell Design and Gate-to-Source Voltage on Avalanche Robustness of SiC MOSFET Integrated JBS Diode

Avalanche Robustness of 1.2kV SiC MOSFET with Integrated Junction-Barrier-Schottky Diode and Gate Leakage Current Analysis

Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS

Comparative Study on Reliability and Application Features of SiC MOSFET

Single Pulse Avalanche Robustness and Analysis for 1200-V SiC Junction Barrier Schottky Diode

Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET

Avalanche Reliability of Planar-gate SiC MOSFET with Varied JFET Region Width and Its Balance with Characteristic Performance

Investigation on Single Pulse Avalanche Failure of SiC MOSFET and Si IGBT

Influence of JFET Width on Short-Circuit Robustness of 1200 V SiC Power MOSFETs

Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

An investigation of avalanche ruggedness and failure mechanisms of 4H SiC trench MOSFETs in unclamped inductive switching by varying load inductances over a wide range

Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications

Investigation and Failure Mode of Asymmetric and Double Trench SiC Mosfet S under Avalanche Conditions

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions

Investigating the Failure Mechanism of Short-Circuit Tests in 1.2-Kv SiC JBS-Integrated MOSFETs

Investigation of Avalanche Capability of 1200V 4H-Sic MPS Diodes and JBS Diodes

Study of Drain-Extended Nmos under Electrostatic Discharge Stress in 28 Nm and 40 Nm Cmos Process

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks

Impact Analysis of Off-State Avalanche-Breakdown Stress on 650 V-Class Superjunction MOSFET