Abstract:In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors under repetitive avalanche shocks are investigated in details. With the help of Silvaco TCAD simulations, gate capacitance versus gate voltage (C-g-V-g) measurement, and three-terminal charge pumping test, the main damaged position is demonstrated to be the SiC/SiO2 interface along junction FET (JFET) region instead of the body diode where most of the avalanche current passes through. Dominant avalanche degradation mechanism is then confirmed to be the injection of holes into the gate oxide above the JFET region. Since the channel region and the main junction of body diode are not seriously damaged by the avalanche stress, static parameters all remain stable. Meanwhile, due to the injection of holes, the depletion layer beneath the JFET region gets thinner, resulting in the increase of gate-drain capacitance (C-gd) under low drain-source voltage (V-ds) bias condition. It further takes responsibilities for the increments in input capacitance (C-iss), output capacitance (C-oss), and reverse transfer capacitance (C-rss). Moreover, it results in the extension of Miller plateau. Therefore, the increase of gate charge and delay of turn-OFF time after being stressed by repetitive avalanche shocks are monitored. Moreover, turn-ON and turn-OFF dissipated energies after different unclamped-inductive-switching stress cycles are extracted. They are rarely influenced by the stress for the overlapping areas of voltage and current during switching procedures are relatively stable.

Avalanche Reliability of Planar-gate SiC MOSFET with Varied JFET Region Width and Its Balance with Characteristic Performance

Comparative Study on Reliability and Application Features of SiC MOSFET

Influence of JFET Width on Short-Circuit Robustness of 1200 V SiC Power MOSFETs

Influence of Cell Design and Gate-to-Source Voltage on Avalanche Robustness of SiC MOSFET Integrated JBS Diode

Performance and Short-Circuit Reliability of SiC MOSFETs with Enhanced JFET Doping Design

Review of Avalanche Tolerance of Silicon Carbide Power MOSFETs

Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET

Investigation on Single Pulse Avalanche Failure of SiC MOSFET and Si IGBT

Avalanche Robustness of 1.2kV SiC MOSFET with Integrated Junction-Barrier-Schottky Diode and Gate Leakage Current Analysis

Investigation on Single Pulse Avalanche Failure of 1200V SiC MOSFETs at Different Temperatures

Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions

Experimental Investigation of the Single Pulse Avalanche Ruggedness of SiC Power MOSFETs

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks

A Two-Dimensional Computer-Aided Design Study of Unclamped Inductive Switching in an Improved 4H-SiC VDMOSFET

Impact of Negative Gate Bias and Inductive Load on the Single-Pulse Avalanche Capability of 1200-V SiC Trench MOSFETs

Characteristics and avalanche investigation of SiC VDMOSFETs with enhanced P-Based implantation

Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions

A Behavior Model of Planar SiC MOSFET Considering Avalanche Breakdown