Abstract:In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors under repetitive avalanche shocks are investigated in details. With the help of Silvaco TCAD simulations, gate capacitance versus gate voltage (C-g-V-g) measurement, and three-terminal charge pumping test, the main damaged position is demonstrated to be the SiC/SiO2 interface along junction FET (JFET) region instead of the body diode where most of the avalanche current passes through. Dominant avalanche degradation mechanism is then confirmed to be the injection of holes into the gate oxide above the JFET region. Since the channel region and the main junction of body diode are not seriously damaged by the avalanche stress, static parameters all remain stable. Meanwhile, due to the injection of holes, the depletion layer beneath the JFET region gets thinner, resulting in the increase of gate-drain capacitance (C-gd) under low drain-source voltage (V-ds) bias condition. It further takes responsibilities for the increments in input capacitance (C-iss), output capacitance (C-oss), and reverse transfer capacitance (C-rss). Moreover, it results in the extension of Miller plateau. Therefore, the increase of gate charge and delay of turn-OFF time after being stressed by repetitive avalanche shocks are monitored. Moreover, turn-ON and turn-OFF dissipated energies after different unclamped-inductive-switching stress cycles are extracted. They are rarely influenced by the stress for the overlapping areas of voltage and current during switching procedures are relatively stable.

Impact Analysis of Off-State Avalanche-Breakdown Stress on 650 V-Class Superjunction MOSFET

Off-state Avalanche Breakdown Induced Degradation in 20 V NLDMOS Devices

Off-state Avalanche-Breakdown-induced On-Resistance Degradation in SGO–NLDMOS

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Investigation of Failure Mechanisms of 1200V Rated Trench SiC MOSFETs under Repetitive Avalanche Stress

Investigations on the Degradations of Double-Trench SiC Power MOSFETs under Repetitive Avalanche Stress

Failure Analysis and Improvement of Superjunction MOSFET under UIS Stress Condition

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

Investigation and Failure Mode of Asymmetric and Double Trench SiC Mosfet S under Avalanche Conditions

Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions

Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET

Influence of Cell Design and Gate-to-Source Voltage on Avalanche Robustness of SiC MOSFET Integrated JBS Diode

Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Terminal Breakdown Voltage Degradation by Avalanche Stress Induced Hot-Hole Injection in Split Gate Trench Power MOSFET

A Deep Insight into the Degradation of 1.2-Kv 4H-Sic Mosfets under Repetitive Unclamped Inductive Switching Stresses

A Decrease in TDDB Lifetime of Commercial SiC Power MOSFETs under Repetitive Unclamped Inductive Switching Stresses

Analysis of SEB and SEGR in Super-Junction MOSFETs

Impact Analysis of Negative Gate Voltage on SiCMOS Reliability under OFF-State Avalanche Stress

Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress