Abstract:The failure mechanism of double-trench silicon carbide (SiC) power metal–oxide–semiconductor field-effect transistors (MOSFETs) under single-pulse avalanche stress is verified. Instead of the widely reported burning out failure mechanism for planar-gate devices, double-trench SiC power MOSFETs suffer from a totally different failure mechanism, as they can only endure a much lower maximum single-pulse avalanche energy ( $E_{mathrm{ as}}$ ). It is found that during the avalanche process, obvious gate leakage current ( $I_{g}$ ) appears, which is resulted from the high impact ionization rate and high electric field along the gate trench bottom oxide interface, especially the trench corners. The $I_{g}$ continuously grows along with the increase in the peak load current ( $I_{mathrm{ peak}}$ ), eventually leading to the breakdown of the trench bottom gate oxide under avalanche status. By increasing the value of gate resistor ( $R_{g}$ ), the $I_{g}$ raises the gate–source voltage ( $V_{mathrm{ gs}}$ ) during the avalanche process, forcing the channel region in an inversion state. Part of the avalanche current is then diverted into the forward conductive current, changing the failure mode from breakdown of the gate oxide to burning out of the entire device. Moreover, the influence of different avalanche stress conditions, including the di/dt and the ambient temperature (-$T_{a}$ ), on the single-pulse avalanche endurance capability of double-trench SiC power MOSFETs is investigated. All the samples express a similar failure phenomenon. The higher the di/dt is, the shorter the avalanche time the device can endure. This is because the higher $I_{mathrm {peak}}$ results in a higher $I_{g}$ during the avalanche process, leading to early failure of the gate oxide. However, the $T_{a}$ rarely influences the $E_{mathrm{ as}}$ of the device, indicating that the single-pulse avalanche-induced failure of double-trench SiC power MOSFETs has little business with the melting of the lattice or package, demonstrating the correctness of the failure mechanism proposed in this article.

Experimental Investigation on Failure Mechanism of SiC Power MOSFETs under Single Pulse Avalanche Stress

Investigation on Single Pulse Avalanche Failure of 1200V SiC MOSFETs at Different Temperatures

Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions

Failure Mechanism Analysis of SiC MOSFETs in Unclamped Inductive Switching Conditions

Experimental Investigation of the Single Pulse Avalanche Ruggedness of SiC Power MOSFETs

Investigation on Single Pulse Avalanche Failure of SiC MOSFET and Si IGBT

Investigation and Modeling of the Avalanche Failure Mechanism of 1.2-kV 4H-SiC JMOS

Failure Mechanism of Avalanche Condition for 1200-V Double Trench SiC MOSFET

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Investigation of Failure Mechanisms of 1200V Rated Trench SiC MOSFETs under Repetitive Avalanche Stress

Reliability Analysis for Commercial SiC MOSFETs in Single Pulse and Repetitive Surge Current Test

A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures

Verification of Single-Pulse Avalanche Failure Mechanism for Double-Trench SiC Power MOSFETs

Impact of Negative Gate Bias and Inductive Load on the Single-Pulse Avalanche Capability of 1200-V SiC Trench MOSFETs

Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs under Repetitive Avalanche Shocks

Experimental Investigations of SiC MOSFETs under Short-Circuit Operations

Investigation on SiC MOSFET’s Avalanche and Short-Circuit Failure Mechanism

Investigations on the Degradations of Double-Trench SiC Power MOSFETs under Repetitive Avalanche Stress

Investigation of 1200 V SiC MOSFETs' Surge Reliability.

Review of Avalanche Tolerance of Silicon Carbide Power MOSFETs

Investigation of SiC Trench MOSFETs' Reliability under Short-Circuit Conditions