Abstract:AIP Advances, Volume 12, Issue 6, June 2022. The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles. This paper proposes novel vertical GaN-based Schottky diodes with trench MIS structure and an embedded p-GaN protection layer (junction-trench MIS barrier Schottky diodes, J-TMBS). The trench structure and lateral p-n junctions can be achieved by selectively etching the very thin p-GaN and then regrowing n-GaN. Therefore, the fabrication technology avoids the selective area p-type doping process, and the dry etching damage and poor sidewall regrowth interface issue, which are serious in GaN Merged pn/Schottky (MPS) diodes, can also be alleviated for the proposed J-TMBS. Compared with the optimized GaN trench MIS barrier Schottky (TMBS) diodes, the surge current capability and dielectric reliability of the proposed J-TMBS are significantly improved (the electric field of the dielectric layer and maximum lattice temperature under the surge test can be reduced by 448% and 202%, respectively). In addition, the specific on-resistance (Ron,sp) and breakdown voltage remain basically unchanged compared with TMBS. Compared with the optimized GaN MPS diodes, the proposed structure improves the specific on-resistance by 17.2% benefiting from the reduced area of the JFET region without degrading the reverse I–V characteristics and surge current capability. The proposed J-TMBS exhibits potential in practical high voltage (>600 V) application of GaN Schottky power diodes.

Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode with 600-V/10-A Switching Capability

High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability

Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure with Robust Surge Current Ruggedness and Transient Energy Sustaining Capability

Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability

Demonstration of Vertical GaN Schottky Barrier Diode with Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

1000-W Resistive Energy Dissipating Capability Against Inductive Transients Demonstrated in Non-Avalanche AlGaN/GaN Schottky Diode

Over 10 Ka/cm2 Inductive Current Sustaining Capability Demonstrated in GaN-on-GaN Pn Junction with High Ruggedness

Single Pulse Avalanche Robustness and Analysis for 1200-V SiC Junction Barrier Schottky Diode

1 Kv/1.3 Mω·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching Performance

Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode with Fast Switching Characteristics

0.58 mΩ·cm<sup>2</sup>/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm<sup>2</sup> Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation

Avalanche Ruggedness of GaN P-I-n Diodes Grown on Sapphire Substrate

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

1 Kv/1.3 M Omega.Cm(2) Vertical Gan-On-Gan Schottky Barrier Diodes With High Switching Performance

Surge Current Ruggedness in Vertical GaN-on-GaN PiN Diode: Role of Conductivity Modulation

Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN P-I-n Diodes with Shallow Bevel Termination

Vertical GaN-on-GaN P-N Diodes with 10-A Forward Current and 1.6 Kv Breakdown Voltage

Ruggedness Analysis of 600V 4H-Sic JBS Diodes under Repetitive Avalanche Conditions

Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes with a Slanted Sidewall

Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode