Abstract:We report GaN vertical trench MOS barrier Schottky (TMBS) diodes with embedded p-GaN shielding rings (SRs) and systematically investigate the impact of different structural parameters of the p-GaN SRs on the breakdown performance of the GaN-based vertical TMBS diodes by numerical simulation. The charge coupling effect by the embedded p-n junction at the bottom of the trench homogenize the electric field at the trench corner and alleviate the electric field crowding effect at the Schottky contact region, which can effectively avoid the premature breakdown and improve the reverse blocking capability of the TMBS diodes. The p-GaN SRs can also broaden the overlapped depletion region and shift the pinch-off point into the n−-GaN drift region, thus facilitating the 2-D depletion in the n−-GaN drift layer and boosting the breakdown performance of the conventional TMBS diodes. We found that the doping concentration, thickness, and the width of the p-GaN SRs are closely associated with the electric field distribution and the reverse breakdown characteristics of the GaN-based vertical TMBS diodes. The vertical TMBS diodes with optimal p-GaN SR parameters featured a dramatic improvement in the breakdown voltage from 907 to 1281 V, without an obvious degradation in the ON performance. The proposed TMBS diodes with a p-GaN SR structure can pave the way toward a high-performance GaN vertical power device for high-power and high-efficiency power switch applications.

1 Kv/1.3 Mω·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching Performance

1 Kv/1.3 M Omega.Cm(2) Vertical Gan-On-Gan Schottky Barrier Diodes With High Switching Performance

High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode with Fast Switching Characteristics

Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes with a Slanted Sidewall

Vertical GaN-on-GaN P-N Diodes with 10-A Forward Current and 1.6 Kv Breakdown Voltage

1.43 kV GaN-based MIS Schottky barrier diodes

Vertical power diodes based on bulk GaN substrates

0.58 mΩ·cm<sup>2</sup>/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm<sup>2</sup> Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability

High-Voltage and High-I ON /I OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

High-Voltage and High- $i_{\text {on}}/i_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode with Nitridation-Based Termination

6 Kv/3.4 Mω·cm2 Vertical Β-Ga2o3 Schottky Barrier Diode with BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC

Systematic Design and Parametric Analysis of GaN Vertical Trench MOS Barrier Schottky Diode With p-GaN Shielding Rings

1.4-Kv Quasi-Vertical GaN Schottky Barrier Diode with Reverse P-N Junction Termination

Demonstration of Vertical GaN Schottky Barrier Diode with Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

High-Performance GaN Vertical Schottky Barrier Diode with Self-Alignment Trench Structure

GaN-based Quasi-Vertical Schottky Barrier Diode Hybridized with P-Nio Layer to Achieve 1.1 Kv Breakdown Voltage and Enhance the Current Spreading Effect

Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate

Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

Vertical GaN power rectifiers: interface effects and switching performance