Abstract:In this article, we present AlGaN/GaN-based lateral Schottky barrier diodes (SBDs) on sapphire substrate with fully recessed anodes and a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vphantom{_{\int}}$</tex-math> </inline-formula> high-permittivity field plate (FP). A specific ON-resistance of 3.2 m <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega$</tex-math> </inline-formula> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\cdot$</tex-math> </inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> , an on/off current ratio of 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{10}}$</tex-math> </inline-formula> , and a reverse breakdown voltage (BV) of 2.5 kV are simultaneously achieved for the device with the anode-to-cathode space of 30 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula> m. This yields a Baliga’s power figure-of-merit (BFOM) of 1.95 GW/cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> . Our fabricated device shows that the leakage current is hardly affected by the reverse bias. It is because the electric field is pushed apart from the Schottky contact region by the high-permittivity FP. This causes the absence of the defect-related carrier tunneling effect at the Schottky contact region. Meanwhile, the high-permittivity FP helps extend the depletion effect for the drift region and gives rise to the increased BV.

1.43 kV GaN-based MIS Schottky barrier diodes

1 Kv/1.3 Mω·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching Performance

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

1 Kv/1.3 M Omega.Cm(2) Vertical Gan-On-Gan Schottky Barrier Diodes With High Switching Performance

GaN-based Quasi-Vertical Schottky Barrier Diode Hybridized with P-Nio Layer to Achieve 1.1 Kv Breakdown Voltage and Enhance the Current Spreading Effect

High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode with Fast Switching Characteristics

Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability

On the coupled effect of a MIS-based anode and AlGaN-polarized super-junction to reduce the local electric field for AlGaN/GaN Schottky barrier diodes

3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure

A GaN-on-Si Quasi-Vertical Schottky Barrier Diode with Enhanced Performance Using Fluorine Ion-Implanted Field Rings

High-Voltage and High-I ON /I OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

2.7-Kv Algan/Gan Schottky Barrier Diode On Silicon Substrate With Recessed-Anode Structure

High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐μm Anode‐to‐Cathode Spacing (Small 37/2022)

2.5 Kv/1.95 GW/cm2 AlGaN/GaN-Based Lateral Schottky Barrier Diodes with a High-k Field Plate to Reduce Reverse Current

2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure

0.58 mΩ·cm<sup>2</sup>/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm<sup>2</sup> Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation

2.5 kV/1.95 GW/cm<inline-formula> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-<italic>k</italic> Field Plate to Reduce Reverse Current

Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer

10 Kv, 39 Mω·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

1.4-Kv Quasi-Vertical GaN Schottky Barrier Diode with Reverse P-N Junction Termination

Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure