Abstract:SmallVolume 18, Issue 37 2270199 Back CoverFree Access High Power Figure-of-Merit, 10.6-kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-µm Anode-to-Cathode Spacing (Small 37/2022) Ru Xu, Ru Xu The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorPeng Chen, Peng Chen The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorJing Zhou, Jing Zhou The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYimeng Li, Yimeng Li The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYuyin Li, Yuyin Li The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorTinggang Zhu, Tinggang Zhu Corenergy Semiconductor Incorporation, Suzhou, 215600 P. R. ChinaSearch for more papers by this authorKai Cheng, Kai Cheng Enkris Semiconductor Inc, NW-20, Nanopolis, Suzhou, 215000 P. R. ChinaSearch for more papers by this authorDunjun Chen, Dunjun Chen The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorZili Xie, Zili Xie The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorJiandong Ye, Jiandong Ye The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorBin Liu, Bin Liu The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorXiangqian Xiu, Xiangqian Xiu The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorPing Han, Ping Han The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYi Shi, Yi Shi The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorRong Zhang, Rong Zhang The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYoudou Zheng, Youdou Zheng The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this author Ru Xu, Ru Xu The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorPeng Chen, Peng Chen The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorJing Zhou, Jing Zhou The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYimeng Li, Yimeng Li The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYuyin Li, Yuyin Li The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorTinggang Zhu, Tinggang Zhu Corenergy Semiconductor Incorporation, Suzhou, 215600 P. R. ChinaSearch for more papers by this authorKai Cheng, Kai Cheng Enkris Semiconductor Inc, NW-20, Nanopolis, Suzhou, 215000 P. R. ChinaSearch for more papers by this authorDunjun Chen, Dunjun Chen The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorZili Xie, Zili Xie The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorJiandong Ye, Jiandong Ye The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorBin Liu, Bin Liu The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorXiangqian Xiu, Xiangqian Xiu The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorPing Han, Ping Han The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYi Shi, Yi Shi The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorRong Zhang, Rong Zhang The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYoudou Zheng, Youdou Zheng The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this author First published: 15 September 2022 https://doi.org/10.1002/smll.202270199AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Graphical Abstract Schottky Barrier Diodes GaN is a promising candidate for next-generation power electronic devices, but its potential is far from being realized. In article number 2107301, Peng Chen, Rong Zhang, Youdou Zheng, and co-workers demonstrate a high power figure-of-merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel, and sub-100-μm anode-to-cathode spacing without any other additional structures, which gives a clear and positive answer that GaN can be used in ultra-high voltage applications. Volume18, Issue37September 15, 20222270199 RelatedInformation

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