GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

J. Gao,Y. Jin,B. Xie,C. P. Wen,Y. Hao,M. Wang

DOI: https://doi.org/10.1109/drc.2018.8442184

2018-01-01

Abstract:AlGaN/GaN lateral diodes on silicon are considered very promising for next generation power conversion systems owing to the excellent material properties. Typically, the anode recess is a frequently-used and effective technology in reducing the SBD's V ON and RON,SP [1]. However, the rough surface morphology and poor recess depth control in common dry etching are two critical issues that would lead to an increased leakage current and premature breakdown [2]. In this report, we employ a LPCVD Si 3 N 4 compatible self-terminated, and plasma-free recess technique in an AlGaN/GaN double channel anode-recessed SBD. The anode region is prevented from plasma bombardment and the recess could stop precisely at the upper heterojunction interface with a smooth surface morphology. The SBD with a 15 μm LAC exhibits a low RON,SP of 1.32 mΩ·cm 2 , a remarkable VON uniformity and a leakage current of ~ 0.2 μA/mm at -300 V. Moreover, with the assistance of high quality LPCVD Si3N4, a 1.2kV breakdown voltage and a high Baliga' s figure-of-merit of 1.1GW/cm 2 are ultimately achieved in the same device.