Abstract:This work demonstrates multi-channel AlGaN/GaN Schottky barrier diodes (SBDs) with a breakdown voltage (BV) over 10 kV, the highest BV reported in GaN devices to date. The epitaxial structure consists of a p-GaN cap layer and five AlGaN/GaN channels continuously grown on a low-cost 4-inch sapphire substrate. A novel device design is proposed for electric field management, i.e., the p-GaN reduced surface field (RESURF) structure, which balances the net charges in the multi-channel at reverse biases. The SBD with a 98- $mu text{m}$ anode-to-cathode length ( ${L}_{{text {AC}}}{)}$ shows a BV of 9.15 kV and a specific on-resistance ( ${R}_{ mathrm{scriptscriptstyle ON}}{)}$ of 29.5 $text{m}Omega cdot $ cm2, rendering a Baliga's figure of merit (FOM) of 2.84 GW/cm2. The SBD with a 123- $mu text{m}~{L}_{{text {AC}}}$ shows a BV over 10 kV and a ${R}_{ mathrm{scriptscriptstyle ON}}$ of 39 $text{m}Omega cdot $ cm2, which is 2.5-fold lower than the ${R}_{ mathrm{scriptscriptstyle ON}}$ of the state-of-the-art 10-kV SiC junction barrier Schottky diodes. The Baliga's FOMs of our 4.6-10 kV GaN SBDs well exceed the SiC unipolar limit. These results show the great promise of GaN for medium- and high-voltage power electronics.

A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 Kv Breakdown Voltage by Using Double Barrier Anode Structure

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

Β-Ga₂o₃ Lateral Schottky Barrier Diodes with > 10 Kv Breakdown Voltage and Anode Engineering

High Power Figure-of-Merit, 10.6-Kv AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-m Anode-to-Cathode Spacing

High-Voltage Algan/Gan-Based Lateral Schottky Barrier Diodes

2.7-Kv Algan/Gan Schottky Barrier Diode On Silicon Substrate With Recessed-Anode Structure

High-Voltage and High-I ON /I OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

10 Kv, 39 Mω·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure

10 kV, 39 mΩ·cm 2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure

Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

1.4-Kv Quasi-Vertical GaN Schottky Barrier Diode with Reverse P-N Junction Termination

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

2.5 Kv/1.95 GW/cm2 AlGaN/GaN-Based Lateral Schottky Barrier Diodes with a High-k Field Plate to Reduce Reverse Current

High-Performance GaN Vertical Schottky Barrier Diode with Self-Alignment Trench Structure

Lateral Algan/Gan Power Diode With Mis-Gated Hybrid Anode For Ultra-Low Turn-On Voltage And High Breakdown Voltage

High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐μm Anode‐to‐Cathode Spacing (Small 37/2022)