Abstract:In this article, we present AlGaN/GaN-based lateral Schottky barrier diodes (SBDs) on sapphire substrate with fully recessed anodes and a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\vphantom{_{\int}}$</tex-math> </inline-formula> high-permittivity field plate (FP). A specific ON-resistance of 3.2 m <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega$</tex-math> </inline-formula> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\cdot$</tex-math> </inline-formula> cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> , an on/off current ratio of 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{10}}$</tex-math> </inline-formula> , and a reverse breakdown voltage (BV) of 2.5 kV are simultaneously achieved for the device with the anode-to-cathode space of 30 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula> m. This yields a Baliga’s power figure-of-merit (BFOM) of 1.95 GW/cm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> . Our fabricated device shows that the leakage current is hardly affected by the reverse bias. It is because the electric field is pushed apart from the Schottky contact region by the high-permittivity FP. This causes the absence of the defect-related carrier tunneling effect at the Schottky contact region. Meanwhile, the high-permittivity FP helps extend the depletion effect for the drift region and gives rise to the increased BV.

2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

2.69 kV/2.11 mO.cm(2) and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

2.69 kV/2.11 m?cm<SUP>2</SUP> and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

2.69 kV/2.11 m Omega center dot cm(2) and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

Lateral Algan/Gan Power Diode With Mis-Gated Hybrid Anode For Ultra-Low Turn-On Voltage And High Breakdown Voltage

Tri-Gated Hybrid Anode AlGaN/GaN Power Diode with Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current

0.3 V-T/1.1 Kv Algan/Gan Lateral Power Diode with Mis-Gated Hybrid Anode on Silicon Substrate

Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-Gated hybrid anode

High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐μm Anode‐to‐Cathode Spacing (Small 37/2022)

High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al<sub>2</sub>O<sub>3</sub> Gate Dielectric and <i>In Situ</i> Si<sub>3</sub>N<sub>4</sub>-Cap Passivation

GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

2.5 Kv/1.95 GW/cm2 AlGaN/GaN-Based Lateral Schottky Barrier Diodes with a High-k Field Plate to Reduce Reverse Current

Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode

High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage

A Novel Ultra-thin-barrier AlGaN/GaN MIS-gated Hybrid Anode Diode Featuring Improved High-temperature Reverse Blocking Characteristic

2.5 kV/1.95 GW/cm<inline-formula> <tex-math notation="LaTeX">$^{\text{2}}$</tex-math> </inline-formula> AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-<italic>k</italic> Field Plate to Reduce Reverse Current

High performance AlGaN/GaN power diode with edge-terminated hybrid anode

High Power Figure-of-Merit, 10.6-Kv AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-m Anode-to-Cathode Spacing

A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 Kv Breakdown Voltage by Using Double Barrier Anode Structure

Ultrathin Barrier AlGaN/GaN Hybrid‐anode‐diode with MOCVD In‐situ Si 3 N 4 ‐cap and LPCVD‐Si 3 N 4 Bilayer Passivation Stack for Dynamic Characteristic Improvement