Abstract:AlGaN/GaN heterojunction epitaxies with wide bandgap, high critical electric field as well as high density and high mobility two-dimensional electron gas have shown great potential in the application of next-generation high-power and high-frequency devices. Especially, with the development of Si-based GaN epitaxial technique with big size, GaN devices with low cost also show great advantage in consumer electronics. In order to improve the rectification efficiency of AlGaN/GaN Schottky barrier diodes, low leakage current and low turn-on voltage are important. GaN Schottky barrier diodes with low work-function metal as anode are found to be an effective method to decrease turn-on voltage. However, the low Schottky barrier height makes the Schottky interface sensitive to damages of groove surface, which leads to a high leakage current. In this paper, a novel wet-etching technique with thermal oxygen oxidation and KOH corrosion is used to prepare the anode groove, and the surface roughness of groove decreases from 0.57 to 0.23 nm, compared to the dry-etching surface of groove. Meanwhile, the leakage current is suppressed from 1.5×10 -6 to 2.6×10 -7 A/mm. Benefiting from the great corrosion selectively of hot KOH solution to AlGaN barrier layer and GaN channel layer after thermal oxygen oxidation, the spikes of the edge of groove region caused by the nonuniform distribution of plasma in the cavity, and the breakdown voltage of the fabricated AlGaN/GaN SBDs is improved from -1.28 to -1.73 kV.

Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode

Design and Optimizing of Trench Schottky Barrier-Controlled Β-Ga2o3 Schottky Diode with Low Turn-on Voltage and Leakage Current

High Breakdown Voltage of 1.3 Kv and Low Turn-on Voltage of 0.48 V Β-Ga2o3 Heterojunction Barrier Schottky Diode with Tungsten Schottky Contact

Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode

Kilovolt, Low-Barrier Ga2O3 JBS Diode with Ultra-Low Forward Voltage

2.7 Kvβ- Ga2O3 Heterojunction Barrier Schottky Diode with Low Leakage Current < 1 Ma/cm2 Based Upon RESURF Effect

A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 Kv Breakdown Voltage by Using Double Barrier Anode Structure

-Ga2o3 Hetero-Junction Barrier Schottky Diode with Reverse Leakage Current Modulation and BV2/Ron,sp Value of 0.93 GW/cm2

Β-Ga2o3 Vertical Heterojunction Barrier Schottky Diodes Terminated with P-Nio Field Limiting Rings

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact

Β-Ga2o3 Junction Barrier Schottky Diode with NiO P-Well Floating Field Rings

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

2.7 Kv Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination

Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination

Improved Β-Ga2o3 Schottky Barrier Diodes Featuring P-Nio Gradual Junction Termination Extension Within Mesa Structure

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

Double-Barrier Β-Ga2o3 Schottky Barrier Diode with Low Turn-on Voltage and Leakage Current

Double-Barrier β-Ga 2 O 3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current

Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination

8.7 A/700 V Β-Ga2o3 Schottky Barrier Diode Demonstrated by Oxygen Annealing Combined with Self-Aligned Mesa Termination