Abstract:Ni/beta-Ga2O3 lateral Schottky barrier diodes (SBDs) were fabricated on a Sn-doped quasi-degenerate n(+)-Ga2O3 ((2) over bar 01) bulk substrate. The resultant diodes with an area of 7.85 x 10(-5) cm(2) exhibited excellent rectifying characteristics with an ideality factor of 1.21, a forward current density (J) of 127.4 A/cm(2) at 1.4 V, a specific on-state resistance (R-on,R-sp) of 1.54 m Omega.cm(2), and an ultra-high on/off ratio of 2.1 x 10(11) at perpendicular to 1 V. Due to a small depletion region in the highly-doped substrate, a breakdown feature was observed at -23 V, which corresponded to a breakdown field of 2.1 MV/cm and a power figure-of-merit (V-B(2)/R-on) of 3.4 x 10(5) W/cm(2). Forward current-voltage characteristics were described well by the thermionic emission theory while thermionic field emission and trap-assisted tunneling were the dominant transport mechanisms at low and high reverse biases, respectively, which was a result of the contribution of deep-level traps at the metal-semiconductor interface. The presence of interfacial traps also caused the difference in Schottky barrier heights of 1.31 eV and 1.64 eV respectively determined by current-voltage and capacitance-voltage characteristics. With reduced trapping effect and incorporation of drift layers, the beta-Ga2O3 SBDs could further provide promising materials for delivering both high current output and high breakdown voltage.

High Breakdown Voltage of 1.3 Kv and Low Turn-on Voltage of 0.48 V Β-Ga2o3 Heterojunction Barrier Schottky Diode with Tungsten Schottky Contact

Design and Optimizing of Trench Schottky Barrier-Controlled Β-Ga2o3 Schottky Diode with Low Turn-on Voltage and Leakage Current

Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode

2.7 Kvβ- Ga2O3 Heterojunction Barrier Schottky Diode with Low Leakage Current < 1 Ma/cm2 Based Upon RESURF Effect

-Ga2o3 Hetero-Junction Barrier Schottky Diode with Reverse Leakage Current Modulation and BV2/Ron,sp Value of 0.93 GW/cm2

Β-Ga2o3 Vertical Heterojunction Barrier Schottky Diodes Terminated with P-Nio Field Limiting Rings

1 Kv Vertical $\Beta$-Ga2o3 Heterojunction Barrier Schottky Diode with Hybrid Unipolar and Bipolar Operation

Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact

A self-aligned Ga2O3 heterojunction barrier Schottky power diode

Kilovolt, Low-Barrier Ga2O3 JBS Diode with Ultra-Low Forward Voltage

1.2 Kv/2.9 M Omega.Cm(2) Vertical Nio/Beta-Ga2o3 Heterojunction Diodes With High Switching Performance

Superior Performance Β-Ga2o3 Junction Barrier Schottky Diodes Implementing P-Nio Heterojunction and Beveled Field Plate for Hybrid Cockcroft–Walton Voltage Multiplier

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

Double-Barrier β-Ga 2 O 3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current

Double-Barrier Β-Ga2o3 Schottky Barrier Diode with Low Turn-on Voltage and Leakage Current

Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure

3-step field-plated β-Ga 2 O 3 SBDs and HJDs with sub-1 V turn-on and kilo-volt class breakdown

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

A 1.86-Kv Double-Layered NiO/ Β -Ga2o3 Vertical P–n Heterojunction Diode

1.2kV/2.9mΩ.cm2 Vertical NiO/β-Ga2 O3 Heterojunction Diodes with High Switching Performance

Β-Ga2o3 Junction Barrier Schottky Diode with NiO P-Well Floating Field Rings