Abstract:We demonstrate a novel conductivity-controlled junction termination extension (JTE) technique using p-type NiO – a key element for potential commercialization of Ga 2 O 3 power devices without common reliability concerns. The hole concentration of the NiO layer as JTE can be regulated by changing the gas atmosphere during sputtering growth, which can be precisely controlled to maximize the breakdown voltage $(V_{\mathrm{br}})$. The implementation of the JTE results in high-performance vertical $\beta -\mathrm{Ga}_{2} \mathrm{O}_{3}$ Schottky barrier diodes (SBDs), in which the reverse leakage is significantly suppressed, suggesting the effectiveness of p-NiO JTE in reducing fringe electric field. The $\beta -\mathrm{Ga}_{2} \mathrm{O}_{3}$ SBDs with an optimized hole concentration about $10 ^{17}\ \mathrm{cm}^{-3}$ in the JTE region exhibit a low specific on-resistance $(R_{\mathrm{on,sp}})$ of $2.9 \mathrm{m}\Omega \cdot \mathrm{cm}^{2}$ and a high $V_{\mathrm{br}}$ of 2.1 kV, yielding a high power figure-of-merit (PFOM) of 1.52 GW/cm 2 . In addition, a high forward current density of 180 A/cm 2 @2 V and a high breakdown voltage of 1.3 kV for $\beta -\mathrm{Ga}_{2} \mathrm{O}_{3}$ JTE-SBD with area of 0.78 mm 2 were achieved. These results demonstrate the great potential of p-NiO as a controllable and reliable technique for junction engineering in $\beta -\mathrm{Ga}_{2} \mathrm{O}_{3}$ power devices.

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Β-Ga2o3 Vertical Heterojunction Barrier Schottky Diodes Terminated with P-Nio Field Limiting Rings

1 Kv Vertical $\Beta$-Ga2o3 Heterojunction Barrier Schottky Diode with Hybrid Unipolar and Bipolar Operation

Improved Β-Ga2o3 Schottky Barrier Diodes Featuring P-Nio Gradual Junction Termination Extension Within Mesa Structure

6 Kv/3.4 Mω·cm2 Vertical Β-Ga2o3 Schottky Barrier Diode with BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

High-Performance Vertical Β-Ga2 O3 Schottky Barrier Diodes Featuring P-NiO JTE with Adjustable Conductivity

Vertical Β-Ga2o3 Schottky Barrier Diode with the Composite Termination Structure

2.7 Kvβ- Ga2O3 Heterojunction Barrier Schottky Diode with Low Leakage Current < 1 Ma/cm2 Based Upon RESURF Effect

Kilovolt, Low-Barrier Ga2O3 JBS Diode with Ultra-Low Forward Voltage

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Improved Vertical Β-Ga2o3 Schottky Barrier Diodes with Conductivity-Modulated P-Nio Junction Termination Extension

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Over 1.8 GW/cm(2) beveled-mesa NiO/beta-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability

Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact

High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability

Β-Ga2o3 Junction Barrier Schottky Diode with NiO P-Well Floating Field Rings

Improved Vertical beta-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

Over 1 GW/cm<SUP>2</SUP> Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes Without Edge Termination