Abstract:Selective-area p-type doping has been regarded as one of the primary challenges in vertical GaN junction-based power devices. Nickel oxide (NiO), serving as a natural p-type semiconductor without the requirement for sophisticated activation and enabling adjustable charge concentration, is potentially feasible to form pn hetero-junction in GaN power devices. In this work, a vertical GaN Schottky barrier diode (SBD) featuring hybrid p-NiO junction termination extension (HP-JTE) with fluorine (F)-implanted buried layer (FIBL) has been demonstrated. With FIBL incorporated underneath p-NiO in the termination region, the reverse leakage current can be effectively reduced by approximately 3 orders of magnitude. By virtue of photon emission microscopy measurements, it has also been verified that the light emission and leakage current through p-NiO termination region can be effectively suppressed by FIBL. Thanks to the HP-JTE structure as well as the nearly ideal Schottky interface, the vertical GaN SBD exhibits a high current swing of similar to 10(13), a low ideality factor of similar to 1.02, a low differential R-ON of similar to 0.89 m ohm center dot cm(2), a low forward voltage drop of similar to 0.8 V(defined at 100 A/cm(2)), and a breakdown voltage of similar to 780 V(defined at 0.1 A/cm(2)). The characterizations and findings in this work can provide valuable insights into the p-NiO/GaN hetero-junction-based power devices.

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