Abstract:Large-size vertical <italic>β</italic>-Ga2O3 Schottky barrier diodes (SBDs) with various device areas were demonstrated on a Si-doped <italic>n</italic>-type drift layer grown by hydride vapor phase epitaxy (HVPE) on bulk Sn-doped (001) <italic>n</italic>-type <italic>β</italic>-Ga2O3 substrate. In this letter, the devices have two circular contacts with a diameter of 1500 and 500 μm and two square contacts with dimensions of 1600 × 1600 μm2 and 800 × 800 μm2, corresponding to the area of 0.2 × 10−2 cm2 (the smallest device), 0.6 × 10−2, 1.8 × 10−2, and 2.6 × 10−2 cm2 (the largest device). The breakdown voltage (<italic>BV</italic>) was determined to be −261 V for the largest device and −427 V for the smallest device. Also, the ideality factor (<italic>η</italic>) of vertical Ga2O3 SBDs with different device areas exhibited the same value of 1.07, except for the largest device area of 2.6 × 10−2 cm2 with an ideality factor of 1.21. At an applied forward bias of <italic>VF</italic>= 2 V, the specific <sc>on</sc>-state resistance (<italic>RonA</italic>) of all the Ga2O3 SBDs remains relatively low with values ranging from 1.43 × 10−2 Ω cm2 to 7.73 × 10−2 Ω cm2. The measured turn-<sc>on</sc> voltage (<italic>Von</italic>) of all the SBDs remains low with a narrow distribution.

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

Over 1 GW/cm<SUP>2</SUP> Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes Without Edge Termination

High-Performance Vertical $\beta$ -Ga 2 O 3 Schottky Barrier Diode with Implanted Edge Termination

2.5Kv/3.78mω⋅cm² Low Forward Voltage Vertical Β-Ga₂o₃ Schottky Rectifier with Field Plate Assisted Deep Mesa Termination

Vertical Β-Ga2o3 Schottky Barrier Diode with the Composite Termination Structure

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

2.7 Kv Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

2.5kV/3.78mΩ·cm 2 Low Forward Voltage Vertical β-Ga 2 O 3 Schottky Rectifier with Field Plate assisted Deep Mesa Termination

Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination

8.7 A/700 V Β-Ga2o3 Schottky Barrier Diode Demonstrated by Oxygen Annealing Combined with Self-Aligned Mesa Termination

70-Μm-body Ga2O3 Schottky Barrier Diode with 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency

6 Kv/3.4 Mω·cm2 Vertical Β-Ga2o3 Schottky Barrier Diode with BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC

Improved Vertical beta-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

High-Voltage ( $\overline{\text{2}}01$ ) $\beta$ -Ga 2 O 3 Vertical Schottky Barrier Diode with Thermally-Oxidized Termination

A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

0.58 mΩ·cm<sup>2</sup>/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm<sup>2</sup> Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

Improved Β-Ga2o3 Schottky Barrier Diodes Featuring P-Nio Gradual Junction Termination Extension Within Mesa Structure

8.7 A/700 V β-Ga 2 O 3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination

Demonstration of Large-Size Vertical Ga2O3 Schottky Barrier Diodes