Demonstration of Large-Size Vertical Ga2O3 Schottky Barrier Diodes

M. Paranthaman,I. Kravchenko,Neil R. Taylor,P. Joshi,L. Cao,T. Aytug,M. Ji

DOI: https://doi.org/10.1109/TPEL.2020.3001530

IF: 5.967

2021-01-01

IEEE Transactions on Power Electronics

Abstract:Large-size vertical <italic>β</italic>-Ga₂O₃ Schottky barrier diodes (SBDs) with various device areas were demonstrated on a Si-doped <italic>n</italic>-type drift layer grown by hydride vapor phase epitaxy (HVPE) on bulk Sn-doped (001) <italic>n</italic>-type <italic>β</italic>-Ga₂O₃ substrate. In this letter, the devices have two circular contacts with a diameter of 1500 and 500 μm and two square contacts with dimensions of 1600 × 1600 μm² and 800 × 800 μm², corresponding to the area of 0.2 × 10⁻² cm² (the smallest device), 0.6 × 10⁻², 1.8 × 10⁻², and 2.6 × 10⁻² cm² (the largest device). The breakdown voltage (<italic>BV</italic>) was determined to be −261 V for the largest device and −427 V for the smallest device. Also, the ideality factor (<italic>η</italic>) of vertical Ga₂O₃ SBDs with different device areas exhibited the same value of 1.07, except for the largest device area of 2.6 × 10⁻² cm² with an ideality factor of 1.21. At an applied forward bias of <italic>V_F</italic>= 2 V, the specific <sc>on</sc>-state resistance (<italic>R_onA</italic>) of all the Ga₂O₃ SBDs remains relatively low with values ranging from 1.43 × 10⁻² Ω cm² to 7.73 × 10⁻² Ω cm². The measured turn-<sc>on</sc> voltage (<italic>V_on</italic>) of all the SBDs remains low with a narrow distribution.

Physics,Engineering,Materials Science