Abstract:Large-size vertical <italic>β</italic>-Ga2O3 Schottky barrier diodes (SBDs) with various device areas were demonstrated on a Si-doped <italic>n</italic>-type drift layer grown by hydride vapor phase epitaxy (HVPE) on bulk Sn-doped (001) <italic>n</italic>-type <italic>β</italic>-Ga2O3 substrate. In this letter, the devices have two circular contacts with a diameter of 1500 and 500 μm and two square contacts with dimensions of 1600 × 1600 μm2 and 800 × 800 μm2, corresponding to the area of 0.2 × 10−2 cm2 (the smallest device), 0.6 × 10−2, 1.8 × 10−2, and 2.6 × 10−2 cm2 (the largest device). The breakdown voltage (<italic>BV</italic>) was determined to be −261 V for the largest device and −427 V for the smallest device. Also, the ideality factor (<italic>η</italic>) of vertical Ga2O3 SBDs with different device areas exhibited the same value of 1.07, except for the largest device area of 2.6 × 10−2 cm2 with an ideality factor of 1.21. At an applied forward bias of <italic>VF</italic>= 2 V, the specific <sc>on</sc>-state resistance (<italic>RonA</italic>) of all the Ga2O3 SBDs remains relatively low with values ranging from 1.43 × 10−2 Ω cm2 to 7.73 × 10−2 Ω cm2. The measured turn-<sc>on</sc> voltage (<italic>Von</italic>) of all the SBDs remains low with a narrow distribution.

Large-Scale <i></i>-Ga<sub>2</sub>O<sub>3</sub> Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage

Design and Optimizing of Trench Schottky Barrier-Controlled Β-Ga2o3 Schottky Diode with Low Turn-on Voltage and Leakage Current

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

2.7 Kv Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination

Over 1 GW/cm<SUP>2</SUP> Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes Without Edge Termination

Double-Barrier β-Ga 2 O 3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current

Double-Barrier Β-Ga2o3 Schottky Barrier Diode with Low Turn-on Voltage and Leakage Current

A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

6 Kv/3.4 Mω·cm2 Vertical Β-Ga2o3 Schottky Barrier Diode with BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC

70-Μm-body Ga2O3 Schottky Barrier Diode with 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency

Vertical Β-Ga₂o₃ Schottky Barrier Diodes with Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

Kilovolt, Low-Barrier Ga2O3 JBS Diode with Ultra-Low Forward Voltage

Vertical Β-Ga2o3 Schottky Barrier Diode with the Composite Termination Structure

Demonstration of Large-Size Vertical Ga2O3 Schottky Barrier Diodes

Field-Plated Lateral Β-Ga2o3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 Kv and High DC Power Figure-of-Merit of 500 MW/cm2

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

Improved Β-Ga2o3 Schottky Barrier Diodes Featuring P-Nio Gradual Junction Termination Extension Within Mesa Structure

Temperature-dependent Electrical Characteristics of Β–ga2o3 Trench Schottky Barrier Diodes Via Self-Reactive Etching

8.7 A/700 V Β-Ga2o3 Schottky Barrier Diode Demonstrated by Oxygen Annealing Combined with Self-Aligned Mesa Termination

-Ga2o3 Hetero-Junction Barrier Schottky Diode with Reverse Leakage Current Modulation and BV2/Ron,sp Value of 0.93 GW/cm2