Abstract:Ni/beta-Ga2O3 lateral Schottky barrier diodes (SBDs) were fabricated on a Sn-doped quasi-degenerate n(+)-Ga2O3 ((2) over bar 01) bulk substrate. The resultant diodes with an area of 7.85 x 10(-5) cm(2) exhibited excellent rectifying characteristics with an ideality factor of 1.21, a forward current density (J) of 127.4 A/cm(2) at 1.4 V, a specific on-state resistance (R-on,R-sp) of 1.54 m Omega.cm(2), and an ultra-high on/off ratio of 2.1 x 10(11) at perpendicular to 1 V. Due to a small depletion region in the highly-doped substrate, a breakdown feature was observed at -23 V, which corresponded to a breakdown field of 2.1 MV/cm and a power figure-of-merit (V-B(2)/R-on) of 3.4 x 10(5) W/cm(2). Forward current-voltage characteristics were described well by the thermionic emission theory while thermionic field emission and trap-assisted tunneling were the dominant transport mechanisms at low and high reverse biases, respectively, which was a result of the contribution of deep-level traps at the metal-semiconductor interface. The presence of interfacial traps also caused the difference in Schottky barrier heights of 1.31 eV and 1.64 eV respectively determined by current-voltage and capacitance-voltage characteristics. With reduced trapping effect and incorporation of drift layers, the beta-Ga2O3 SBDs could further provide promising materials for delivering both high current output and high breakdown voltage.

70-Μm-body Ga2O3 Schottky Barrier Diode with 1.48 K/W Thermal Resistance, 59 A Surge Current and 98.9% Conversion Efficiency

Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3

A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

8.7 A/700 V Β-Ga2o3 Schottky Barrier Diode Demonstrated by Oxygen Annealing Combined with Self-Aligned Mesa Termination

8.7 A/700 V β-Ga 2 O 3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination

2.5kV/3.78mΩ·cm 2 Low Forward Voltage Vertical β-Ga 2 O 3 Schottky Rectifier with Field Plate assisted Deep Mesa Termination

Vertical Β-Ga2o3 Schottky Barrier Diode with the Composite Termination Structure

Kilovolt, Low-Barrier Ga2O3 JBS Diode with Ultra-Low Forward Voltage

Over 1 GW/cm<SUP>2</SUP> Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes Without Edge Termination

2.5Kv/3.78mω⋅cm² Low Forward Voltage Vertical Β-Ga₂o₃ Schottky Rectifier with Field Plate Assisted Deep Mesa Termination

Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

Fast Switching Ga2O3 Schottky Barrier Power Diode with Beveled-Mesa and BaTiO3 Field Plate Edge Termination

Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination

Large-Scale <i></i>-Ga<sub>2</sub>O<sub>3</sub> Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage

6 Kv/3.4 Mω·cm2 Vertical Β-Ga2o3 Schottky Barrier Diode with BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC

Field-Plated Lateral Β-Ga2o3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 Kv and High DC Power Figure-of-Merit of 500 MW/cm2

2.7 Kv Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination

Large-area Β-Ga 2 O 3 Schottky Barrier Diode and Its Application in DC–DC Converters