Abstract:Large-size vertical <italic>β</italic>-Ga2O3 Schottky barrier diodes (SBDs) with various device areas were demonstrated on a Si-doped <italic>n</italic>-type drift layer grown by hydride vapor phase epitaxy (HVPE) on bulk Sn-doped (001) <italic>n</italic>-type <italic>β</italic>-Ga2O3 substrate. In this letter, the devices have two circular contacts with a diameter of 1500 and 500 μm and two square contacts with dimensions of 1600 × 1600 μm2 and 800 × 800 μm2, corresponding to the area of 0.2 × 10−2 cm2 (the smallest device), 0.6 × 10−2, 1.8 × 10−2, and 2.6 × 10−2 cm2 (the largest device). The breakdown voltage (<italic>BV</italic>) was determined to be −261 V for the largest device and −427 V for the smallest device. Also, the ideality factor (<italic>η</italic>) of vertical Ga2O3 SBDs with different device areas exhibited the same value of 1.07, except for the largest device area of 2.6 × 10−2 cm2 with an ideality factor of 1.21. At an applied forward bias of <italic>VF</italic>= 2 V, the specific <sc>on</sc>-state resistance (<italic>RonA</italic>) of all the Ga2O3 SBDs remains relatively low with values ranging from 1.43 × 10−2 Ω cm2 to 7.73 × 10−2 Ω cm2. The measured turn-<sc>on</sc> voltage (<italic>Von</italic>) of all the SBDs remains low with a narrow distribution.

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