Abstract:In this study, we fabricated superb $\beta $ -Ga2O3 Schottky barrier diodes (SBDs) with high breakdown voltage ( ${V}_{\text {br}}{)}$ and low leakage through combining platinum oxide (PtO $_{\text {x}}{)}$ and anodic self-aligned mesa termination (SAMT). The PtOx that forms a high barrier with $\beta $ -Ga2O3 enables the SAMT to function sufficiently. The in-situ annealing dry etch process repair the mesa sidewall and improve the Schottky contact well. SBDs with different mesa-etched depths ( ${D}_{\text {ee}}{)}$ were systematically studied, including 0, 0.3, 0.6, 0.9, and $1.2~\mu \text{m}$ . The results showed that the ${V}_{\text {br}}$ of the PtOx/ $\beta $ -Ga2O3 SBD increased from 1120 V to 2738 V, yielding a high power figure of merit (PFOM) of 1.02 GW/cm2. Meanwhile, the device maintained a less than $10~\mu \text{A}$ /cm2 leakage current density until -2000 V. Devices with radii of 200, 100, and $50~\mu \text{m}$ obtained highest ${V}_{\text {br}}$ of 2508, 2772, and 2738 V at a ${D}_{\text {ee}}$ of $1.2~\mu \text{m}$ , respectively. The devices can be passivated by SU-8 without ${V}_{\text {br}}$ degradation. This work provides an effective method for further improving the performance of $\beta $ -Ga2O3 SBDs and promotes the application of $\beta $ -Ga2O3 power diodes.

2.5Kv/3.78mω⋅cm² Low Forward Voltage Vertical Β-Ga₂o₃ Schottky Rectifier with Field Plate Assisted Deep Mesa Termination

2.5kV/3.78mΩ·cm 2 Low Forward Voltage Vertical β-Ga 2 O 3 Schottky Rectifier with Field Plate assisted Deep Mesa Termination

Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination

Vertical Β-Ga2o3 Schottky Barrier Diode with the Composite Termination Structure

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

Over 1 GW/cm<SUP>2</SUP> Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes Without Edge Termination

Vertical Β-Ga₂o₃ Schottky Barrier Diodes with Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination

6 Kv/3.4 Mω·cm2 Vertical Β-Ga2o3 Schottky Barrier Diode with BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC

2.7 Kv Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination

High-Performance Vertical $\beta$ -Ga 2 O 3 Schottky Barrier Diode with Implanted Edge Termination

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

High-Voltage ( $\overline{\text{2}}01$ ) $\beta$ -Ga 2 O 3 Vertical Schottky Barrier Diode with Thermally-Oxidized Termination

A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

8.7 A/700 V Β-Ga2o3 Schottky Barrier Diode Demonstrated by Oxygen Annealing Combined with Self-Aligned Mesa Termination

Field-Plated Lateral Β-Ga2o3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 Kv and High DC Power Figure-of-Merit of 500 MW/cm2

Improved Β-Ga2o3 Schottky Barrier Diodes Featuring P-Nio Gradual Junction Termination Extension Within Mesa Structure

High Permittivity Dielectric Field-Plated Vertical (001) $β$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$

1.4-Kv Quasi-Vertical GaN Schottky Barrier Diode with Reverse P-N Junction Termination

Fast Switching Ga2O3 Schottky Barrier Power Diode with Beveled-Mesa and BaTiO3 Field Plate Edge Termination

Β-Ga₂o₃ Lateral Schottky Barrier Diodes with > 10 Kv Breakdown Voltage and Anode Engineering

8.7 A/700 V β-Ga 2 O 3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination