Abstract:We demonstrate a novel conductivity-controlled junction termination extension (JTE) technique using p-type NiO – a key element for potential commercialization of Ga 2 O 3 power devices without common reliability concerns. The hole concentration of the NiO layer as JTE can be regulated by changing the gas atmosphere during sputtering growth, which can be precisely controlled to maximize the breakdown voltage $(V_{\mathrm{br}})$. The implementation of the JTE results in high-performance vertical $\beta -\mathrm{Ga}_{2} \mathrm{O}_{3}$ Schottky barrier diodes (SBDs), in which the reverse leakage is significantly suppressed, suggesting the effectiveness of p-NiO JTE in reducing fringe electric field. The $\beta -\mathrm{Ga}_{2} \mathrm{O}_{3}$ SBDs with an optimized hole concentration about $10 ^{17}\ \mathrm{cm}^{-3}$ in the JTE region exhibit a low specific on-resistance $(R_{\mathrm{on,sp}})$ of $2.9 \mathrm{m}\Omega \cdot \mathrm{cm}^{2}$ and a high $V_{\mathrm{br}}$ of 2.1 kV, yielding a high power figure-of-merit (PFOM) of 1.52 GW/cm 2 . In addition, a high forward current density of 180 A/cm 2 @2 V and a high breakdown voltage of 1.3 kV for $\beta -\mathrm{Ga}_{2} \mathrm{O}_{3}$ JTE-SBD with area of 0.78 mm 2 were achieved. These results demonstrate the great potential of p-NiO as a controllable and reliable technique for junction engineering in $\beta -\mathrm{Ga}_{2} \mathrm{O}_{3}$ power devices.

High-Voltage ( $\overline{\text{2}}01$ ) $\beta$ -Ga 2 O 3 Vertical Schottky Barrier Diode with Thermally-Oxidized Termination

Vertical β-Ga 2 O 3 Schottky Barrier Diode with the Composite Termination Structure

Over 1 GW/cm<SUP>2</SUP> Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes Without Edge Termination

2.5kV/3.78mΩ·cm 2 Low Forward Voltage Vertical β-Ga 2 O 3 Schottky Rectifier with Field Plate assisted Deep Mesa Termination

2.7 Kv Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination

2.5Kv/3.78mω⋅cm² Low Forward Voltage Vertical Β-Ga₂o₃ Schottky Rectifier with Field Plate Assisted Deep Mesa Termination

8.7 A/700 V Β-Ga2o3 Schottky Barrier Diode Demonstrated by Oxygen Annealing Combined with Self-Aligned Mesa Termination

Vertical Β-Ga₂o₃ Schottky Barrier Diodes with Field Plate Assisted Negative Beveled Termination and Positive Beveled Termination

Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination

Improved Vertical beta-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

Improved Β-Ga2o3 Schottky Barrier Diodes Featuring P-Nio Gradual Junction Termination Extension Within Mesa Structure

Improved Vertical Β-Ga2o3 Schottky Barrier Diodes with Conductivity-Modulated P-Nio Junction Termination Extension

8.7 A/700 V β-Ga 2 O 3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination

High-Voltage and High- $i_{\text {on}}/i_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode with Nitridation-Based Termination

A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

High-Voltage and High-I ON /I OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

Low density of interface trap states and temperature dependence study of Ga2O3 Schottky barrier diode with p-NiOx termination

High-Performance Vertical Β-Ga2 O3 Schottky Barrier Diodes Featuring P-NiO JTE with Adjustable Conductivity

High Permittivity Dielectric Field-Plated Vertical (001) $β$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$

High Performance Lateral Schottky Diodes Based on Quasi-Degenerated Ga 2 O 3