2.5kV/3.78mΩ·cm 2 Low Forward Voltage Vertical β-Ga 2 O 3 Schottky Rectifier with Field Plate assisted Deep Mesa Termination

Jiangbin Wan,Hengyu Wang,Ce Wang,Haoyuan Chen,Chi Zhang,Luanxi Zhang,Yanjun Li,Kuang Sheng

DOI: https://doi.org/10.1109/led.2024.3375852

IF: 4.8157

2024-01-01

IEEE Electron Device Letters

Abstract:This work demonstrates vertical β-Ga2O3 Schottky Barrier Diodes (SBDs) with a field plate assisted deep mesa termination. The 9μm deep mesa is etched using a self-aligned technique to mitigate electric field crowding at the anode edge. Additionally, a dielectric combination of 100nm Al2O3 and 4.8μm SiO2 is deposited to fill the trench, enabling the utilization of a field plate to further reduce the electric field at the anode edge. TCAD simulations demonstrate a substantial reduction in the electric field at the anode edge. Owing to the effective termination, the fabricated SBD shows a high breakdown voltage of 2.5kV, which is 2.3 times larger than the unterminated SBDs. The specific on resistance is 3.78mΩ·cm2. Consequently, a high Power Figure of Merit (PFOM) of 1.65GW/cm2 is hence achieved, which is among the highest in multi-kilovolts Ga2O3 SBDs. Moreover, a remarkably low forward voltage of 1.45V at 100A/cm2 is also achieved, which is among the lowest in multi-kilovolts Ga2O3 SBDs. The results demonstrate the promising potential of Ga2O3 SBDs for multi-kilovolts applications.

engineering, electrical & electronic