Abstract:SmallVolume 18, Issue 37 2270199 Back CoverFree Access High Power Figure-of-Merit, 10.6-kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-µm Anode-to-Cathode Spacing (Small 37/2022) Ru Xu, Ru Xu The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorPeng Chen, Peng Chen The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorJing Zhou, Jing Zhou The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYimeng Li, Yimeng Li The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYuyin Li, Yuyin Li The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorTinggang Zhu, Tinggang Zhu Corenergy Semiconductor Incorporation, Suzhou, 215600 P. R. ChinaSearch for more papers by this authorKai Cheng, Kai Cheng Enkris Semiconductor Inc, NW-20, Nanopolis, Suzhou, 215000 P. R. ChinaSearch for more papers by this authorDunjun Chen, Dunjun Chen The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorZili Xie, Zili Xie The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorJiandong Ye, Jiandong Ye The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorBin Liu, Bin Liu The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorXiangqian Xiu, Xiangqian Xiu The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorPing Han, Ping Han The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYi Shi, Yi Shi The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorRong Zhang, Rong Zhang The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYoudou Zheng, Youdou Zheng The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this author Ru Xu, Ru Xu The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorPeng Chen, Peng Chen The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorJing Zhou, Jing Zhou The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYimeng Li, Yimeng Li The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYuyin Li, Yuyin Li The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorTinggang Zhu, Tinggang Zhu Corenergy Semiconductor Incorporation, Suzhou, 215600 P. R. ChinaSearch for more papers by this authorKai Cheng, Kai Cheng Enkris Semiconductor Inc, NW-20, Nanopolis, Suzhou, 215000 P. R. ChinaSearch for more papers by this authorDunjun Chen, Dunjun Chen The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorZili Xie, Zili Xie The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorJiandong Ye, Jiandong Ye The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorBin Liu, Bin Liu The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorXiangqian Xiu, Xiangqian Xiu The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorPing Han, Ping Han The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYi Shi, Yi Shi The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorRong Zhang, Rong Zhang The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this authorYoudou Zheng, Youdou Zheng The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210033 P. R. ChinaSearch for more papers by this author First published: 15 September 2022 https://doi.org/10.1002/smll.202270199AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Graphical Abstract Schottky Barrier Diodes GaN is a promising candidate for next-generation power electronic devices, but its potential is far from being realized. In article number 2107301, Peng Chen, Rong Zhang, Youdou Zheng, and co-workers demonstrate a high power figure-of-merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel, and sub-100-μm anode-to-cathode spacing without any other additional structures, which gives a clear and positive answer that GaN can be used in ultra-high voltage applications. Volume18, Issue37September 15, 20222270199 RelatedInformation

Abstract:SID Symposium Digest of Technical PapersVolume 54, Issue S1 p. 848-848 Poster Session: P-11: Quantum Dots P-11.6: Efficient radiative recombination centers induced by trench defects in multiple-quantum wells of red InGaN light-emitting diodes Z.J. Pan, Z.J. Pan State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorZ.Z. Chen, Z.Z. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China, 226000Search for more papers by this authorY.Y. Chen, Y.Y. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorJ.X. Nie, J.X. Nie State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorC.H. Deng, C.H. Deng State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorH.D. Zhang, H.D. Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorB.Y. Dong, B.Y. Dong State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorX. Xin, X. Xin State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorW.H. Chen, W.H. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorX.N. Kang, X.N. Kang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorZ.W. Liang, Z.W. Liang Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorQ. Wang, Q. Wang Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorG.Y. Zhang, G.Y. Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorB. Shen, B. Shen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China, 226000Search for more papers by this author Z.J. Pan, Z.J. Pan State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorZ.Z. Chen, Z.Z. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China, 226000Search for more papers by this authorY.Y. Chen, Y.Y. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorJ.X. Nie, J.X. Nie State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorC.H. Deng, C.H. Deng State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorH.D. Zhang, H.D. Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorB.Y. Dong, B.Y. Dong State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorX. Xin, X. Xin State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorW.H. Chen, W.H. Chen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorX.N. Kang, X.N. Kang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871Search for more papers by this authorZ.W. Liang, Z.W. Liang Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorQ. Wang, Q. Wang Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorG.Y. Zhang, G.Y. Zhang State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Dongguan Institute of Optoelectronics, Peking University, Dongguan, Guangdong, China, 523808Search for more papers by this authorB. Shen, B. Shen State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China, 100871 Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, China, 226000Search for more papers by this author First published: 03 August 2023 https://doi.org/10.1002/sdtp.16431AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat No abstract is available for this article. References 1 Koukitu, A.. et al Journal of Crystal Growth 170, 306-311 (1997) 2 Iida, D and Ohkawa, K. Semiconductor Science and Technology 37, 1 (2021) 3 Massabuau, F. C. P. et al Applied Physics Letters 101, 21(2012). 4 Bruckbauer, J. et al Applied Physics Letters, 98, 14(2011) Volume54, IssueS1International Conference on Display Technology 2023 (Volume 54, Issue S1)April 2023Pages 848-848 ReferencesRelatedInformation

High Power Figure‐of‐Merit, 10.6‐kv AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐µm Anode‐to‐Cathode Spacing (small 37/2022)

High Power Figure‐of‐Merit, 10.6‐kV AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub‐100‐μm Anode‐to‐Cathode Spacing (Small 37/2022)

High Power Figure-of-Merit, 10.6-Kv AlGaN/GaN Lateral Schottky Barrier Diode with Single Channel and Sub-100-m Anode-to-Cathode Spacing

GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability

3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure

P‐11.6: Efficient Radiative Recombination Centers Induced by Trench Defects in Multiple‐quantum Wells of Red InGaN Light‐emitting Diodes

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

High performance AlGaN/GaN power diode with edge-terminated hybrid anode

1 Kv/1.3 Mω·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching Performance

2.7-Kv Algan/Gan Schottky Barrier Diode On Silicon Substrate With Recessed-Anode Structure

10 Kv, 39 Mω·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 Kv Breakdown Voltage by Using Double Barrier Anode Structure

Vertical GaN Schottky Barrier Diode with Hybrid PNiO Junction Termination Extension

0.58 mΩ·cm<sup>2</sup>/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm<sup>2</sup> Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation

1.43 kV GaN-based MIS Schottky barrier diodes

1.4-Kv Quasi-Vertical GaN Schottky Barrier Diode with Reverse P-N Junction Termination

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-Gated hybrid anode

High-Efficiency and High-Power Rectifiers Using Cost-Effective AlGaN/GaN Schottky Diode with Accurate Large-Signal Parameter Extraction