Abstract:As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties (e.g., high electron mobility, high electron saturation velocity, and critical electric field). Vertical GaN devices have been investigated, are regarded as one of the most promising candidates for power electronics application, and are characterized by the capacity for high voltage, high current, and high breakdown voltage. Among those devices, vertical GaN-based PN junction diode (PND) has been considerably investigated and shows great performance progress on the basis of high epitaxy quality and device structure design. However, its device epitaxy quality requires further improvement. In terms of device electric performance, the electrical field crowding effect at the device edge is an urgent issue, which results in premature breakdown and limits the releasing superiorities of the GaN material, but is currently alleviated by edge termination. This review emphasizes the advances in material epitaxial growth and edge terminal techniques, followed by the exploration of the current GaN developments and potential advantages over silicon carbon (SiC) for materials and devices, the differences between GaN Schottky barrier diodes (SBDs) and PNDs as regards mechanisms and features, and the advantages of vertical devices over their lateral counterparts. Then, the review provides an outlook and reveals the design trend of vertical GaN PND utilized for a power system, including with an inchoate vertical GaN PND.

Vertical power diodes based on bulk GaN substrates

1 Kv/1.3 Mω·cm2 Vertical GaN-on-GaN Schottky Barrier Diodes with High Switching Performance

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes with a Slanted Sidewall

Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate

1 Kv/1.3 M Omega.Cm(2) Vertical Gan-On-Gan Schottky Barrier Diodes With High Switching Performance

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

Design Strategy of Vertical GaN Power Schottky Barrier Diodes with P‐gan Junction Termination Extension and Experimental Demonstration of Selective P‐doping by Implantation

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

0.58 mΩ·cm<sup>2</sup>/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm<sup>2</sup> Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation

Vertical GaN Power Diodes With a Bilayer Edge Termination

Systematic Design and Parametric Analysis of GaN Vertical Trench MOS Barrier Schottky Diode With p-GaN Shielding Rings

Review of Recent Progress on Vertical GaN-Based PN Diodes

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Vertical GaN Schottky Barrier Diode with Hybrid PNiO Junction Termination Extension

Design strategies and systematic analysis of GaN vertical MPS diodes with T-shaped shielding rings

Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure

High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer

Vertical GaN power rectifiers: interface effects and switching performance

Over 1 GW/cm 2 Vertical Ga 2 O 3 Schottky Barrier Diodes Without Edge Termination

High-Voltage and High-I ON /I OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination