Abstract:In GaN Schottky barrier diodes (SBD), there is a trade-off between the turn-on voltage and the leakage current. In this study, recess-free 4 nm-thin-barrier AlGaN/GaN SBDs with minimal leakage current as well as excellent turn-on voltage homogeneity are developed, which enable better electrical control to pinch off the 2DEG channel under the anode region and avoids trap introduced in the barrier etching process. In detail, the effect of reverse stress on the SBD performance is initially explored by using differential conductance, and then, the anode-to-cathode distances and temperatures dependence of SBDs output characteristics are systematically studied. The fabricated thin-barrier GaN SBDs show a turn-on voltage of ∼0.75 V and a low level leakage current of 9.66 × 10−10 (1.91 × 10−8) A/mm at 300 (423) K, which is among the lowest reported values at the comparable reverse bias voltage and temperature. Moreover, structure parameters of the thin-barrier AlGaN/GaN SBD are systematically modeled and optimized by the TCAD simulations, including anode metal work function, Al mole fraction, the anode-to-cathode distance, and slanted anode angle. The introduction of slanted anode is found to have significant effect on the improvement of reverse breakdown voltage and leakage current characteristics.

Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer

Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with 1010 High On/Off Current Ratio and Low Specific On-Resistance

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10<SUP>10</SUP> High On/Off Current Ratio and Low Specific On-Resistance

High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer

Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm2

2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Fully vertical AlN-on-SiC Schottky barrier diodes

3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure

Multi-channel AlGaN/GaN Schottky barrier diodes with a half through-hole

Quasi-Vertical GaN-on-Silicon Schottky Barrier Diode Terminated With Hydrogen Modulated In-Situ pn Junction

A GaN-on-Si Quasi-Vertical Schottky Barrier Diode with Enhanced Performance Using Fluorine Ion-Implanted Field Rings

650-V Double-Channel Lateral Schottky Barrier Diode with Dual-Recess Gated Anode

Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer

On the coupled effect of a MIS-based anode and AlGaN-polarized super-junction to reduce the local electric field for AlGaN/GaN Schottky barrier diodes

Low ON-Resistance GaN Schottky Barrier Diode with High V-ON Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

2.7-Kv Algan/Gan Schottky Barrier Diode On Silicon Substrate With Recessed-Anode Structure

Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study