Abstract:Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign substrates are highly attractive for the development of device technology. In this work, by performing pulsed laser lift-off and laser annealing techniques, high-performance fully-vertical GaN Schottky barrier diodes (SBDs) with superior N-face ohmic contact characteristics are demonstrated. The resulting device exhibits low specific contact resistivity of 3.51 × 10 -5 Ω·cm 2 and differential specific on-resistance of 0.58 mΩ·cm 2 , as well as intact anode Schottky contact. In particular, this device demonstrates robust electrothermal robustness, such as the largest surge current density of 15.6 kA/cm 2 to date. Moreover, by implementing N-implanted termination, the breakdown voltage of the device is remarkably enhanced from 240 to 523 V, which is competitive with the state-of-the-art quasi-vertical SBDs. These results reveal the notable potential of pulsed laser lift-off/annealing combined with N-implanted termination for realizing fully-vertical devices.

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10<SUP>10</SUP> High On/Off Current Ratio and Low Specific On-Resistance

Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with 1010 High On/Off Current Ratio and Low Specific On-Resistance

High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer

High-Voltage and High-I ON /I OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

Quasi-Vertical GaN-on-Silicon Schottky Barrier Diode Terminated With Hydrogen Modulated In-Situ pn Junction

Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure

Fully-vertical GaN-on-SiC Schottky barrier diode with ultrathin AlGaN buffer layer

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

High-Performance GaN Vertical Schottky Barrier Diode with Self-Alignment Trench Structure

A GaN-on-Si Quasi-Vertical Schottky Barrier Diode with Enhanced Performance Using Fluorine Ion-Implanted Field Rings

0.58 mΩ·cm<sup>2</sup>/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm<sup>2</sup> Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation

MOS-structured MoS2/GaN Schottky Barrier Diodes with High On/off Current Ratio and Low Threshold Voltage

Low ON-Resistance GaN Schottky Barrier Diode with High V-ON Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer

Demonstration of Vertical GaN Schottky Barrier Diode with Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

High-Voltage Quasi-Vertical GaN Junction Barrier Schottky Diode with Fast Switching Characteristics

High-Voltage and High- $i_{\text {on}}/i_{\text {OFF}}$ Vertical GaN-on-GaN Schottky Barrier Diode with Nitridation-Based Termination

Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates

Vertical GaN Schottky Barrier Diode with Hybrid PNiO Junction Termination Extension