Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm2

Jialun Li,Renqiang Zhu,Ka Ming Wong,Kei May Lau
DOI: https://doi.org/10.1109/jeds.2024.3386857
2024-04-27
IEEE Journal of the Electron Devices Society
Abstract:This letter reports a high-performance fully-vertical GaN-on-SiC p-i-n diode enabled by a conductive n-AlGaN buffer. The buffer conductivity was optimized by tuning the Al composition. The diode presents an ultra-low specific ON-resistance of 0.25 cm2, a high current swing of 1011, and a high breakdown voltage of 850 V with a 5- -thick drift layer, leading to a Baliga's figure of merit (BFOM) of 2.89 GW/cm2. The diode performance at elevated temperatures and the OFF-state leakage mechanism are analyzed. The demonstrated fully-vertical GaN-on-SiC p-i-n diode with a conductive buffer reveals a simple way towards realizing high-performance fully-vertical GaN-on-SiC devices for high power applications.
engineering, electrical & electronic
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