Abstract:Achieving high-performance fully-vertical GaN devices on low-cost and large-scale foreign substrates are highly attractive for the development of device technology. In this work, by performing pulsed laser lift-off and laser annealing techniques, high-performance fully-vertical GaN Schottky barrier diodes (SBDs) with superior N-face ohmic contact characteristics are demonstrated. The resulting device exhibits low specific contact resistivity of 3.51 × 10 -5 Ω·cm 2 and differential specific on-resistance of 0.58 mΩ·cm 2 , as well as intact anode Schottky contact. In particular, this device demonstrates robust electrothermal robustness, such as the largest surge current density of 15.6 kA/cm 2 to date. Moreover, by implementing N-implanted termination, the breakdown voltage of the device is remarkably enhanced from 240 to 523 V, which is competitive with the state-of-the-art quasi-vertical SBDs. These results reveal the notable potential of pulsed laser lift-off/annealing combined with N-implanted termination for realizing fully-vertical devices.

Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure with Robust Surge Current Ruggedness and Transient Energy Sustaining Capability

1000-W Resistive Energy Dissipating Capability Against Inductive Transients Demonstrated in Non-Avalanche AlGaN/GaN Schottky Diode

Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode with 600-V/10-A Switching Capability

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

Demonstration of Vertical GaN Schottky Barrier Diode with Robust Electrothermal Ruggedness and Fast Switching Capability by Eutectic Bonding and Laser Lift-Off Techniques

2.7-Kv Algan/Gan Schottky Barrier Diode On Silicon Substrate With Recessed-Anode Structure

2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure

3.4-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate With Engineered Anode Structure

Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

High Performance Quasi-Vertical GaN Junction Barrier Schottky Diode with Zero Reverse Recovery and Rugged Avalanche Capability

GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology.

High-Voltage Algan/Gan-Based Lateral Schottky Barrier Diodes

0.58 mΩ·cm<sup>2</sup>/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm<sup>2</sup> Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation

Low ON-Resistance GaN Schottky Barrier Diode with High V-ON Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

Electric Field Modulation Technique for High-Voltage AlGaN/GaN Schottky Barrier Diodes

High Performance AlGaN/GaN Schottky Barrier Diodes with Floating Gate

Simulation Optimization of AlGaN/GaN SBD with Field Plate Structures and Recessed Anode

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 Kv Breakdown Voltage by Using Double Barrier Anode Structure

2.5 Kv/1.95 GW/cm2 AlGaN/GaN-Based Lateral Schottky Barrier Diodes with a High-k Field Plate to Reduce Reverse Current