Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes
Ting-Ting Wang,Xiao Wang,Yue He,Mao Jia,Qiong Ye,Yang Xu,Yi-Han Zhang,Yang Li,Li-Hua Bai,Xiao-Hua Ma,Yue Hao,Jin-Ping Ao
DOI: https://doi.org/10.1109/ted.2021.3071296
IF: 3.1
2021-06-01
IEEE Transactions on Electron Devices
Abstract:High-performance AlGaN/GaN lateral Schottky barrier diodes (SBDs) with recess structure and dual metal nitride anodes were demonstrated. With high work-function and nonrecess structure, a NiN anode enhances the breakdown voltage (BV), while a TiN anode reduces the turn-on voltage ( ${V}_{ mathrm{scriptscriptstyle ON}}$ ) due to its low work-function and contact to the two-dimensional electron gas (2DEG) layer directly on a recess structure. As the length of the NiN anode ( ${L}_{r}$ ) on the nonrecess region decreases from 75 to 3 $mu text{m}$ , ${V}_{ mathrm{scriptscriptstyle ON}}$ is reduced from 0.56 to 0.30 V, while the reverse leakage current slightly increases from ${3} times {10}^{-{4}}$ to ${2} times {10}^{-{3}}$ A/cm<sup>2</sup> at the bias of −10 V. The lateral AlGaN/GaN SBD with a ${L}_{r}$ of 3 $mu text{m}$ at a distance of cathode–anode ( ${L}_{text {AC}}$ ) of 20 $mu text{m}$ achieves a high BV of 1.62 kV, an ultralow ${V}_{ mathrm{scriptscriptstyle ON}}$ of 0.30 V and a small capacitance of 6.0 pF at zero bias with little degradation on ON-resistance, indicating superior potential application in high-frequency and hig--power devices.
engineering, electrical & electronic,physics, applied