Abstract:Silicon carbide (SiC) is a typical wide band-gap semiconductor material that exhibits excellent physical properties such as high electron saturated drift velocity, high breakdown field, etc. The SiC material contains many polytypes, among which 4H-SiC is almost the most popular polytype as it possesses a suitable band-gap and high electron saturated drift velocity. In order to produce 4H-SiC power devices with a high barrier voltage of over several thousand volts, the minority carrier lifetime of 4H-SiC single crystals must be carefully managed. In general, both bulk defects and surface defects in 4H-SiC can reduce the minority carrier lifetime. Nevertheless, as surface defects have received less attention in publications, this study reviews surface defects in 4H-SiC. These defects can be classified into a number of categories, such as triangle defect, pit, carrot, etc. This paper discusses each one individually followed by the introduction of industrially feasible methods to characterize them. Following this, the impact of surface defects on the minority carrier lifetime is analyzed and discussed. Finally, a particular emphasis is put on discussing various passivation schemes and their effects on the minority carrier lifetime of 4H-SiC single crystals. Overall, this review paper aims to help young researchers comprehend surface defects in 4H-SiC single crystal material.

Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes

Effect of Various Defects on 4H-Sic Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

Large Current Ni/4H-SiC SBDs with Field Plate and Implantation Edge Termination Technology

Surface Defects in 4H-Sic: Properties, Characterizations and Passivation Schemes

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Characterization of Ion-Implanted 4H-Sic Schottky Barrier Diodes

Boron-related defects in n-type 4H-SiC Schottky barrier diodes

Evaluation of Schottky barrier diodes fabricated directly on processed 4H-SiC(0001) surfaces

Influence of Defects in SiC (0001) on Epitaxial Graphene

Ni Schottky Barrier Diodes on n-type 4H-Silicon Carbide

Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Understanding the Breakdown Asymmetry of 4H-Sic Power Diodes with Extended Defects at Locations along Step-Flow Direction

Doping Concentration and Surface Morphology of 4H-SiC C-Face Epitaxial Growth

A perspective on leakage current induced by threading dislocations in 4H-SiC Schottky barrier diodes

Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer

Off - State Performances of Ideal Schottky Barrier Diodes (SBD) on Diamond and Silicon Carbide

Defects in epitaxial 4H-SiC revealed by exciton recombination

Electrical characteristics and deep-level transient spectroscopy of a fast-neutron-irradiated 4H–SiC Schottky barrier diode