Abstract:The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocity and larger breakdown voltage, enabling a high intrinsic time resolution and mitigating pile-up effects. Additionally, as radiation hardness requirements grow more demanding, wide-bandgap materials such as 4H-SiC could offer better performance. In this work, the detector performance of 50 micron thick 4H-SiC p-in-n planar pad sensors was investigated at room temperature, using an 241Am alpha source at reverse biases of up to 1100 V. Samples subjected to neutron irradiation with fluences of up to 1e16/cm^2 were included in the study in order to quantify the radiation hardness properties of 4H-SiC. The obtained results are compared to previously performed UV-TCT studies. Samples exhibit a drop in charge collection efficiency (CCE) with increasing irradiation fluence, partially compensated at high reverse bias voltages far above full depletion voltage. A plateau of the collected charges is observed in accordance with the depletion of the volume the alpha particles penetrate for an unirradiated reference detector. For the neutron-irradiated samples, such a plateau only becomes apparent at higher reverse bias. For the highest investigated fluence, CCE behaves almost linearly with increasing reverse bias. Compared to UV-TCT measurements, the reverse bias required to deplete a sensitive volume covering full energy deposition is lower, due to the small penetration depth of the alpha particles. At the highest reverse bias, the measured CCE values agree well with earlier UV-TCT studies, with discrepancies between 1% and 5%.

Electrical characteristics and deep-level transient spectroscopy of a fast-neutron-irradiated 4H–SiC Schottky barrier diode

A DLTS analysis of alpha particle irradiated commercial 4H-SiC Schottky barrier diodes

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

A Review of the Effects of Fast-Neutron Irradiation on the Performance of 4H-SiC Schottky Barrier Detectors

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Recovery at room temperature annealing on 4H–SiC SBDs by gamma irradiation

Radiation effects of high-fluence reactor neutron on Ni/ β -Ga2O3 Schottky barrier diodes

Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-Sic Transistors

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

TCAD modeling of radiation-induced defects in 4H-SiC diodes

Irradiation effect of primary knock-on atoms on conductivity compensation in N-type 4H-SiC Schottky diode under various irradiations

Neutron irradiation and polarization effect of 4H-SiC Schottky detector

Development of 400 V-tolerant Single-Event Effect Hardened 4H-SiC Schottky Diode with linear energy transfer upto 83.5 MeV·cm 2 /mg

Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes

Effect of Neutron Irradiation on Current-Voltage Characteristics of Packaged Diodes Based on 6H-SiC pn Structures

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation