Abstract:The exceptional performance of the silicon sensors in the radiation environment has led to their extensive application in high energy physics. Even so, the future experiments foresee these sensors to be exposed to higher radiation levels. Radiation induces a change in the macroscopic properties of the sensor, thus, severely affecting the sensor performance and ultimately becoming the limiting factor for its operation. With an aim to extend the radiation hardness capabilities of the silicon sensors for the future experiments there has been a growing interest in sensors with novel designs and unique characteristic of intrinsic charge multiplication. However, it is important to understand the effect of radiation damage on these sensors, before employing them in the main detector system. The RD50 collaboration extensively employs TCAD simulation tools for an in-depth understanding and structural optimization of the newly proposed sensor technologies, complementing the measurement results. The simulation package, by the finite element method, solves the Poisson equation coupled with the current continuity equations in the main device, typically with the drift-diffusion current model. There is also the possibility of co-simulating an electronic circuit connected to the main device using the incorporated SPICE package, for example to predict single event effects or read-out related waveforms. The simulation tools also provide an insight into the sensor operation both in the non-irradiated and the irradiated scenario in order to predict the voltage dependence of the leakage current, charge collection and electrical field distribution as function of irradiation. This has required the development of a radiation damage model within the simulation tools such that the measurements are well reproduced. The details of the radiation damage modelling using two commercial TCAD tools Silvaco and Synopsys, are discussed in this work.

TCAD modeling of radiation-induced defects in 4H-SiC diodes

TCAD Simulations of Radiation Damage in 4H-SiC

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Investigation of the Performance Degradation of 4H-SiC Neutron Detectors Using MCNP and TCAD

Characterization of irradiated p-type silicon detectors for TCAD surface radiation damage model validation

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

TCAD modeling of bulk radiation damage effects in silicon devices with the Perugia radiation damage model

Relating Gain Degradation to Defects Production in Neutron-Irradiated 4H-Sic Transistors

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Electron Radiation Effects on the 4H-Sic PiN Diodes Characteristics: an Insight from Point Defects to Electrical Degradation

TCAD Modeling of Surface Radiation Damage Effects: A State-Of-The-Art Review

Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Electrical Characterization and Temperature Reliability of 4H-Sic Schottky Barrier Diodes after Electron Radiation

Non-monotonic Temperature Dependence of Radiation Defect Dynamics in Silicon Carbide

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions

Radiation Damage Modelling: TCAD Simulation

Modeling of Surface Damage at the Si/SiO$_2$-interface of Irradiated MOS-capacitors