Abstract:The exceptional performance of the silicon sensors in the radiation environment has led to their extensive application in high energy physics. Even so, the future experiments foresee these sensors to be exposed to higher radiation levels. Radiation induces a change in the macroscopic properties of the sensor, thus, severely affecting the sensor performance and ultimately becoming the limiting factor for its operation. With an aim to extend the radiation hardness capabilities of the silicon sensors for the future experiments there has been a growing interest in sensors with novel designs and unique characteristic of intrinsic charge multiplication. However, it is important to understand the effect of radiation damage on these sensors, before employing them in the main detector system. The RD50 collaboration extensively employs TCAD simulation tools for an in-depth understanding and structural optimization of the newly proposed sensor technologies, complementing the measurement results. The simulation package, by the finite element method, solves the Poisson equation coupled with the current continuity equations in the main device, typically with the drift-diffusion current model. There is also the possibility of co-simulating an electronic circuit connected to the main device using the incorporated SPICE package, for example to predict single event effects or read-out related waveforms. The simulation tools also provide an insight into the sensor operation both in the non-irradiated and the irradiated scenario in order to predict the voltage dependence of the leakage current, charge collection and electrical field distribution as function of irradiation. This has required the development of a radiation damage model within the simulation tools such that the measurements are well reproduced. The details of the radiation damage modelling using two commercial TCAD tools Silvaco and Synopsys, are discussed in this work.

TCAD modeling of bulk radiation damage effects in silicon devices with the Perugia radiation damage model

TCAD Modeling of Surface Radiation Damage Effects: A State-Of-The-Art Review

Characterization of irradiated p-type silicon detectors for TCAD surface radiation damage model validation

TCAD modeling of radiation-induced defects in 4H-SiC diodes

Comparing different bulk radiation damage models in TCAD simulations of small-pitch 3D Si sensors

Radiation Damage Modelling: TCAD Simulation

TCAD Simulations of Radiation Damage in 4H-SiC

Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors

Modeling of Surface Damage at the Si/SiO$_2$-interface of Irradiated MOS-capacitors

TCAD Modeling of Nanoscale Bulk FinFET Structures with Account of Radiation Exposure

A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

TCAD simulations of silicon strip and pixel sensor optimization

Electrical-modelling, design and simulation of cumulative radiation effects in semiconductor pixels detectors: prospects and limits

Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si

Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling

Study of irradiation damage in silicon at different scales

Modeling and Bulk Characterization of 4HSIC Radiation Detector in Sentaurus TCAD Simulation Environment

Study of Bulk Damage of High Dose Gamma Irradiated p-type Silicon Diodes with Various Resistivities

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Long-term damage induced by hadrons in silicon detectors for uses at the LHC-accelerator and in space missions