Long-term damage induced by hadrons in silicon detectors for uses at the LHC-accelerator and in space missions

I. Lazanu,S. Lazanu

DOI: https://doi.org/10.1238/Physica.Regular.067a00388

2002-09-10

Abstract:In the present paper, the phenomenological model developed by the authors in previous papers has been used to evaluate the degradation induced by hadron irradiation at the future accelerator facilities or by cosmic protons in high resistivity silicon detectors. The damage has been analysed at the microscopic (defects production and their evolution toward equilibrium) and at the macroscopic level (changes in the leakage current of the p-n junction). The rates of production of primary defects, as well as their evolution toward equilibrium have been evaluated considering explicitly the type of the projectile particle and its energy. Vacancy-interstitial annihilation, interstitial migration to sink, complex (VP, VO, CiOi, CiCs) and divacancy formation are taken into account for different initial silicon material. The influence of these defects on the leakage detector current has been calculated in the frame of the Schokley-Read-Hall model.

High Energy Physics - Phenomenology,Astrophysics,High Energy Physics - Experiment

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the damage assessment of silicon detectors after long - term hadron radiation or cosmic proton radiation in the Large Hadron Collider (LHC) accelerator facilities and space missions. Specifically, the research aims to:

1. **Evaluate the performance degradation of silicon detectors caused by hadron irradiation**: Use the phenomenological model previously developed by the authors to evaluate the performance degradation of high - resistivity silicon detectors due to hadron irradiation in future accelerator facilities. At the same time, the influence of cosmic protons on these detectors in space missions is also considered.

2. **Analyze damage at the micro and macro levels**:
- **Micro - level**: Analyze the generation of defects and their evolution to the equilibrium state, including the generation rate of primary defects and their evolution over time.
- **Macro - level**: Study the change of p - n junction leakage current, which is an important indicator for evaluating the performance degradation of detectors.

3. **Consider the influence of different initial silicon materials**: Study the damage differences between standard silicon materials (containing specific concentrations of phosphorus, oxygen and carbon atoms) and oxygen - rich silicon materials (containing a higher concentration of oxygen atoms) under irradiation conditions.

Through these studies, the paper hopes to provide a theoretical basis for the design of more radiation - resistant silicon detectors, especially to provide guidance for the design and optimization of detectors in high - energy physics experiments and space applications.