Abstract:The report contains various aspects of radiation damage in silicon detectors subjected to high intensity hadron and electromagnetic irradiation. It focuses on improvements for the foreseen LHC applications, employing oxygenation of silicon wafers during detector processing (result from CERN-RD48). An updated survey on hadron induced damage is given in the first article. Several improvements are outlined especially with respect to antiannealing problems associated with detector storage during LHC maintenance periods. Open questions are outlined in the final section, among which are a full understanding of differences found between proton and neutron induced damage, process related effects changing the radiation tolerance in addition to the oxygen content and the lack of understanding the changed detector properties on the basis of damage induced point and cluster defects. In addition to float zone silicon, so far entirely used for detector fabrication,Czochralski silicon was also studied and first promising results are shown. The other three papers deal with gamma induced damage including also defects introduced either by processing steps or being inherent to the as grown silicon. However the focus is on measurements after gamma irradiation in a wide dose range. Both the changes in detector properties and defect characterisations have been studied. For the first time it is shown that in contrast to a standard process oxygenated silicon detectors withstand an irradiation dose of up to 1 Grad with only minor deterioration. Also it is shown for the first time that in this case the detector properties can directly be explained by the damage induced point defects. This 1:1 correlation is extremely promising for all future defect engineering work.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the radiation damage to silicon detectors in high - energy physics experiments, especially in future experiments of the Large Hadron Collider (LHC) and the International Linear Collider (TESLA) in extreme hadronic and electromagnetic radiation environments. Specifically, the paper focuses on how these radiation environments affect the performance of silicon detectors, such as the increase in reverse current, the rise in the required depletion voltage, and the decline in charge - collection efficiency, which threaten the normal operation of the detectors. To meet this challenge, researchers have made great efforts in the past few years to improve the radiation tolerance of these devices to ensure, for example, an operating life of up to 10 years in the LHC inner detector. The paper also explores the effect of reducing radiation damage through defect - engineering methods (such as using oxygen - enrichment techniques) and discusses the application prospects of these techniques in current and future experiments. In particular, for the upcoming upgrade of the LHC (SLHC), it is planned to increase the current luminosity by 10 times, which will result in a hadronic flux of \(10^{16}\) equivalent neutrons/cm² accumulated within one operating cycle. At present, no technology can ensure the necessary radiation tolerance of the tracking detector at such a high level. Therefore, exploring possible improvement schemes or completely new methods has become the goal of the new research and development cooperation project CERN - RD50. In addition, the paper also systematically investigates the influence of radiation damage on the operation of silicon detectors and its comprehensive understanding, with special emphasis on the correlation between the defects responsible at the microscopic scale and the macroscopic detector performance changes. Through the study of these relationships, it aims to provide a theoretical basis for understanding and optimizing the design of radiation - tolerant detectors.

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