Abstract:In preparation for the forthcoming High-Luminosity phase of the Large Hadron Collider, the ATLAS experiment is working on major upgrades to its detector systems to effectively accommodate the increase in radiation levels and track density. The foremost among these upgrades entails the replacement of the current inner tracking detector with an advanced all-silicon Inner Tracker (ITk). In the outer region of the ITk apparatus is the Strip Detector. Central to the new strip tracking system are the ITk Strip modules, comprising silicon sensors and hybrid Printed Circuit Boards housing the integral read-out Application-Specific Integrated Circuits (ASICs) as well as power distribution services. Thorough characterisation of the electrical characteristics of the silicon strip modules at various stages of the assembly procedure holds paramount significance in evaluating module performance. This rigorous evaluation ensures timely identification of any anomalies, thereby enabling proactive remedial measures. Notably, during the course of these electrical assessments, certain modules manifested breakdown phenomena occurring below the prescribed threshold of 500 V, mandated by the ITk Quality Control protocols. Based on these observations, controlled exposure to low levels of radiation was suspected to elevate the breakdown voltage in susceptible sensors. This contribution presents results from two irradiation campaigns to investigate potentially beneficial effects of irradiation. One study investigates the effects of gamma irradiation on modules showing an early breakdown after gluing. For this study, modules were exposed to an ionising dose of 11 krad (corresponding to the dose accumulated after several days of operation in the HL-LHC) utilising a 60 Co source. The second campaign focuses on silicon sensor test structures with low breakdown voltage due to intentionally caused mechanical defects and their development after exposure to reactor neutrons. In both cases, preliminary findings suggest a discernible improvement in the breakdown voltage.

Silicon detectors: Damage, modelling and expected long-time behaviour in physics experiments at ultra high energy

SPM Bulletin 15

Long-term damage induced by hadrons in silicon detectors for uses at the LHC-accelerator and in space missions

The role of primary point defects in the degradation of silicon detectors due to hadron and lepton irradiation

Localization and extinction of bacterial populations under inhomogeneous growth conditions

Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

Predictions about the behaviour of diamond, silicon, SiC and some AIIIBV semiconductor materials in hadron fields

Expected behaviour of different semiconductor materials in hadron fields

Electrical-modelling, design and simulation of cumulative radiation effects in semiconductor pixels detectors: prospects and limits

A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Radiation Damage Modelling: TCAD Simulation

Time Dependent Modeling of Single Particle Displacement Damage in Silicon Devices

TCAD Simulations of Radiation Damage in 4H-SiC

Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon

Curing early breakdown in silicon strip sensors with radiation

Characterization of irradiated p-type silicon detectors for TCAD surface radiation damage model validation

Simulation of Radiation Damage for Silicon Drift Detector

Comparing different bulk radiation damage models in TCAD simulations of small-pitch 3D Si sensors

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate