Challenges for silicon pixel sensors at the European XFEL

Robert Klanner,Julian Becker,Eckhart Fretwurst,Ioana Pintilie,Thomas Pöhlsen,Joern Schwandt,Jiaguo Zhang
DOI: https://doi.org/10.1016/j.nima.2013.05.166
2013-12-01
Abstract:A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition rate of the XFEL pulses result in signal distortions due to the plasma effect and in severe radiation damage. The main parameters of X-ray-radiation damage have been determined and their impact on p+n sensors is investigated. These studies form the basis of the optimized design of a pixel-sensor for experimentation at the European XFEL.
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