Abstract:Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 <a class="link-external link-http" href="http://neq.cm" rel="external noopener nofollow">this http URL</a>-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.

First Production of New Thin 3D Sensors for HL-LHC at FBK

3D sensors for the HL-LHC

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

Quality Control (QC) of FBK Preproduction 3D Si Sensors for ATLAS HL-LHC Upgrades

Development of n-in-p pixel modules for the ATLAS Upgrade at HL-LHC

Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

Characterisation of novel thin n-in-p planar pixel modules for the ATLAS Inner Tracker upgrade

Radiation-Hard Active Pixel Sensors for Hl-Lhc Detector Upgrades Based on Hv-Cmos Technology

3D silicon pixel sensors for the CMS experiment tracker upgrade

3D silicon pixel detectors for the ATLAS Forward Physics experiment

200 mm sensor development using bonded wafers

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

Preliminary results of 3D-DDTC pixel detectors for the ATLAS upgrade

Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

Design, fabrication and initial test of a novel 3D-Trench sensor utilizing 8-inch CMOS compatible technology

Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

The Silicon Sensors for the High Granularity Calorimeter of CMS

Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications

Characterization of passive CMOS sensors with RD53A pixel modules

Development of depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade