Abstract:Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 <a class="link-external link-http" href="http://neq.cm" rel="external noopener nofollow">this http URL</a>-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.

Characterisation of novel thin n-in-p planar pixel modules for the ATLAS Inner Tracker upgrade

Development of n-in-p pixel modules for the ATLAS Upgrade at HL-LHC

Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

Measurements and TCAD simulation of novel ATLAS planar pixel detector structures for the HL-LHC upgrade

Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

Recent progress of the ATLAS Planar Pixel Sensor R&D Project

Characterization of new hybrid pixel module concepts for the ATLAS Insertable B-Layer upgrade

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

Characterisation of silicon microstrip detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam

Evaluation of Planar Silicon Pixel Sensors with the RD53A Readout Chip for the Phase-2 Upgrade of the CMS Inner Tracker

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

Achievements of the ATLAS upgrade Planar Pixel Sensors R&D Project

Test beam results of irradiated modules for the CMS Phase-2 upgrade equipped with HPK planar pixel sensors and RD53B-CMS readout chips

Planar pixel sensors for the ATLAS upgrade: beam tests results

Upgrade of the ALICE Inner Tracking System

First Production of New Thin 3D Sensors for HL-LHC at FBK

Evaluation of HPK $n^+$-$p$ planar pixel sensors for the CMS Phase-2 upgrade

ATLAS IBL: a challenging first step for ATLAS Upgrade at the sLHC

Testbeam analysis of biasing structures for irradiated hybrid pixel detectors

Upgrade of the Inner Tracking System of ALICE

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC