Abstract:Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 <a class="link-external link-http" href="http://neq.cm" rel="external noopener nofollow">this http URL</a>-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations.

3D silicon pixel sensors for the CMS experiment tracker upgrade

Evaluation of Planar Silicon Pixel Sensors with the RD53A Readout Chip for the Phase-2 Upgrade of the CMS Inner Tracker

Silicon sensors for the CMS HGCAL upgrade: Challenges, sensor design & electrical characterization

Design and performance of the silicon sensors for the CMS barrel pixel detector

3D sensors for the HL-LHC

CMS Pixel Detector Upgrade

Test beam results of irradiated modules for the CMS Phase-2 upgrade equipped with HPK planar pixel sensors and RD53B-CMS readout chips

A new CMS pixel detector for the LHC luminosity upgrade

First Production of New Thin 3D Sensors for HL-LHC at FBK

The Silicon Sensors for the High Granularity Calorimeter of CMS

The CMS Phase-1 Pixel Detector Upgrade

TCAD simulation of small-pitch 3D sensors for pixel detector upgrades at High Luminosity LHC

Operation and performance of the CMS tracker

Upgrade of the ALICE Inner Tracking System

Position resolution with 25 um pitch pixel sensors before and after irradiation

Evaluation of HPK $n^+$-$p$ planar pixel sensors for the CMS Phase-2 upgrade

3D silicon pixel detectors for the ATLAS Forward Physics experiment

Beam Test Results of the US-CMS Forward Pixel Detector

Signal height in silicon pixel detectors irradiated with pions and protons

Characterisation of novel thin n-in-p planar pixel modules for the ATLAS Inner Tracker upgrade

Silicon detectors for the LHC Phase-II upgrade and beyond. RD50 status report