Abstract:CONTENTS: On Selective screenability and examples of R. Pol. Workshops and conferences: The Oxford Conference on Topology and Computer Science in Honour of Peter Collins and Mike Reed; Boise Extravaganza In Set Theory (BEST2006). Research announcements: The isometry group of the Urysohn space as a Levy group; Chasing Silver; Disjoint Non-Free Subgoups of Abelian Groups; Characterizing metric spaces whose hyperspaces are absolute neighborhood retracts; A Vitali set can be homeomorphic to its complement; o-Boundedness of free objects over a Tychonoff space; On the consistency strength of the Milner-Sauer conjecture; Reconstruction of manifolds and subsets of normed spaces from subgroups of their homeomorphism groups; Reconstruction theorem for homeomorphism groups without small sets and non-shrinking functions of a normed space; Locally Moving Groups and the Reconstruction Problem for Chains and Circles; Divisibility of countable metric spaces; Pre-compact families of finite sets of integers and weakly null sequences in Banach spaces; A semifilter approach to selection principles II: tau^*-covers; Parametrizing the abstract Ellentuck theorem; A notion of selective ultrafilter corresponding to topological Ramsey spaces; Compact spaces generated by retractions; Gromov-Hausdorff ultrametric; Computing the complexity of the relation of isometry between separable Banach spaces; On some classes of Lindelöf Sigma-spaces; On the depth of Boolean algebras. Problem of the Issue.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: the expected degradation of silicon detectors in the next - generation high - energy physics experiments when exposed to a strong radiation environment for a long time. Specifically, the article explores how to prepare possible silicon detector options for the new - generation high - energy physics experiments, because radiation - induced displacement damage will affect the long - term performance of detectors, increase leakage current and depletion voltage, and may eventually lead to device failure, thus affecting the lifespan of the detector system. ### Main Motivation of the Paper The main motivation of the paper is to discuss how to prepare possible detectors for new high - energy physics (HEP) challenges, especially considering only silicon detector options. Due to radiation - induced bulk displacement damage, at the device level, the detector will have effects that affect its long - term use, such as increased leakage current, increased depletion voltage, and may even lead to breakdown, thus affecting the lifespan of the detector system. ### Research Background Currently, semiconductor detectors have been widely used in modern high - energy physics experiments as components of high - resolution vertex and tracking systems and calorimeters. However, with the future demand for higher energy and stronger luminosity, detectors will face more severe radiation environments, which may lead to more serious degradation problems. ### Main Research Contents The article discusses in detail the physical phenomena that cause detector degradation and analyzes the degradation effects of detectors under long - term continuous irradiation conditions in the radiation environments of the next - generation hadron colliders (such as the upgraded versions of LHC, SLHC and VLHC), electron - positron colliders (such as ILC), and astrophysical experiments. Specifically, it analyzes the performance of detectors in radiation environments under different technical options, especially the changes in leakage current and effective carrier concentration. ### Key Conclusions 1. **Degradation Mechanism**: The degradation of detectors is mainly determined by the generation rate of primary defects, but has no obvious correlation with the oxygen concentration in silicon or the resistivity of the initial material. 2. **Material Selection**: For low defect generation rates or shorter - time irradiations, DOFZ silicon is more radiation - resistant than FZ silicon; but for long - time or high - flux irradiations, the difference between the two is not obvious. 3. **Temperature Dependence**: Reducing the temperature can significantly slow down these macroscopic effects. Through these studies, the author hopes to provide more durable silicon detector design suggestions for future high - energy physics experiments to meet higher radiation challenges.

SPM Bulletin 15

Silicon detectors: Damage, modelling and expected long-time behaviour in physics experiments at ultra high energy

Long-term damage induced by hadrons in silicon detectors for uses at the LHC-accelerator and in space missions

Expected behaviour of different semiconductor materials in hadron fields

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Curing early breakdown in silicon strip sensors with radiation

Predictions about the behaviour of diamond, silicon, SiC and some AIIIBV semiconductor materials in hadron fields

Electrical-modelling, design and simulation of cumulative radiation effects in semiconductor pixels detectors: prospects and limits

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Photomultipliers as High Rate Radiation-Resistant In-Situ Sensors in Future Experiments

Silicon solid-state detectors for monitoring high-energy accelerator mixed field radiation environments

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

Irradiation Tests and Expected Performance of Readout Electronics of the ATLAS Hadronic Endcap Calorimeter for the HL-LHC

Signal height in silicon pixel detectors irradiated with pions and protons

Simulation of Radiation Damage for Silicon Drift Detector

Signal and noise of Diamond Pixel Detectors at High Radiation Fluences

Spreading of an active region of semi-insulating GaAs detectors after radiation degradation

Silicon detectors for the LHC Phase-II upgrade and beyond. RD50 status report

Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers

Prediction of Leakage Current and Depletion Voltage in Silicon Detectors under Extra-Terrestrial Radiation Conditions