Abstract:In preparation for the forthcoming High-Luminosity phase of the Large Hadron Collider, the ATLAS experiment is working on major upgrades to its detector systems to effectively accommodate the increase in radiation levels and track density. The foremost among these upgrades entails the replacement of the current inner tracking detector with an advanced all-silicon Inner Tracker (ITk). In the outer region of the ITk apparatus is the Strip Detector. Central to the new strip tracking system are the ITk Strip modules, comprising silicon sensors and hybrid Printed Circuit Boards housing the integral read-out Application-Specific Integrated Circuits (ASICs) as well as power distribution services. Thorough characterisation of the electrical characteristics of the silicon strip modules at various stages of the assembly procedure holds paramount significance in evaluating module performance. This rigorous evaluation ensures timely identification of any anomalies, thereby enabling proactive remedial measures. Notably, during the course of these electrical assessments, certain modules manifested breakdown phenomena occurring below the prescribed threshold of 500 V, mandated by the ITk Quality Control protocols. Based on these observations, controlled exposure to low levels of radiation was suspected to elevate the breakdown voltage in susceptible sensors. This contribution presents results from two irradiation campaigns to investigate potentially beneficial effects of irradiation. One study investigates the effects of gamma irradiation on modules showing an early breakdown after gluing. For this study, modules were exposed to an ionising dose of 11 krad (corresponding to the dose accumulated after several days of operation in the HL-LHC) utilising a 60 Co source. The second campaign focuses on silicon sensor test structures with low breakdown voltage due to intentionally caused mechanical defects and their development after exposure to reactor neutrons. In both cases, preliminary findings suggest a discernible improvement in the breakdown voltage.

SPM Bulletin 15

Silicon detectors: Damage, modelling and expected long-time behaviour in physics experiments at ultra high energy

Long-term damage induced by hadrons in silicon detectors for uses at the LHC-accelerator and in space missions

The role of primary point defects in the degradation of silicon detectors due to hadron and lepton irradiation

Expected behaviour of different semiconductor materials in hadron fields

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Curing early breakdown in silicon strip sensors with radiation

Predictions about the behaviour of diamond, silicon, SiC and some AIIIBV semiconductor materials in hadron fields

Electrical-modelling, design and simulation of cumulative radiation effects in semiconductor pixels detectors: prospects and limits

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Photomultipliers as High Rate Radiation-Resistant In-Situ Sensors in Future Experiments

Silicon solid-state detectors for monitoring high-energy accelerator mixed field radiation environments

Charge Collection Efficiency Simulations of Irradiated Silicon Strip Detectors

Irradiation Tests and Expected Performance of Readout Electronics of the ATLAS Hadronic Endcap Calorimeter for the HL-LHC

Signal height in silicon pixel detectors irradiated with pions and protons

Simulation of Radiation Damage for Silicon Drift Detector

Signal and noise of Diamond Pixel Detectors at High Radiation Fluences

Spreading of an active region of semi-insulating GaAs detectors after radiation degradation

Silicon detectors for the LHC Phase-II upgrade and beyond. RD50 status report

Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers