Abstract:The utilisation of crystalline semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications, in medicine and industry, makes necessary to obtain radiation harder materials. Diamond, SiC and different AIIIBV compounds (GaAs, GaP, InP, InAs, InSb) are possible competitors for silicon to different electronic devices for the up-mentioned applications. The main goal of this paper is to give theoretical predictions about the behaviour of these semiconductors in hadron fields (pions, protons). The effects of the interaction between the incident particle and the semiconductor are characterised in the present paper both from the point of view of the projectile, the relevant quantity being the energy loss by nuclear interactions, and of the target, using the concentration of primary radiation induced defects on unit particle fluence. Some predictions about the damage induced by hadrons in these materials in possible applications in particle physics and space experiments are done.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: in a high - radiation environment, the prediction of the behavior of different semiconductor materials (such as diamond, silicon, silicon carbide, and some III - V compound semiconductors) in hadron fields (such as pions, protons) and their radiation - damage characteristics. Specifically, the research aims to understand the performance changes of these materials under high - energy particle impacts through theoretical prediction, thereby providing a basis for selecting more radiation - resistant materials for detectors and electronic devices used in future particle colliders, space applications, medicine, and industry. ### Main Objectives of the Paper 1. **Theoretical Prediction**: - Research the behavior of diamond, silicon, silicon carbide, and different III - V compounds (such as GaAs, GaP, InP, InAs, InSb) in hadron fields. - Predict the radiation - damage characteristics of these materials under the action of high - energy particles (such as pions, protons). 2. **Evaluation of Material Properties**: - Describe the effects of particle - semiconductor material interactions from the perspective of incident particles (energy loss or equivalent stopping power) and target materials (primary radiation - induced defect concentration CPD per unit particle flux). - Evaluate the durability and reliability of different materials in a high - radiation environment. 3. **Practical Applications**: - Analyze the application potential of these materials in particle physics experiments such as the Large Hadron Collider (LHC). - Explore their performance when exposed to cosmic rays for a long time in space applications. ### Mathematical Description of Specific Problems - **Energy - Loss Formula**: \[ S_{\text{nuclear}}(E)=\frac{dE}{dx} \] where \(E\) is the kinetic energy of the incident particle, and \(S_{\text{nuclear}}\) is the nuclear stopping power. - **Primary Defect Concentration Formula**: \[ CPD(E)=\frac{1}{2E_d}\int\sum_i\frac{d\sigma_i}{d\Omega}L(E_{Ri})d\Omega \] where \(E_d\) is the energy threshold for lattice displacement, \(E_{Ri}\) is the recoil energy of the residual nucleus, \(L(E_{Ri})\) is the Lindhard factor that describes the distribution between ionization and displacement, and \(\frac{d\sigma_i}{d\Omega}\) is the differential cross - section of the process responsible for defect generation. ### Conclusion Through theoretical prediction of the behavior of different semiconductor materials in hadron fields, this research provides an important basis for selecting materials suitable for high - radiation environments. In particular, the research found that diamond is the most radiation - resistant material in most cases, while GaAs exhibits high radiation damage and is not suitable for use in high - radiation environments. These results are of great significance for future particle physics experiments and space applications.

Predictions about the behaviour of diamond, silicon, SiC and some AIIIBV semiconductor materials in hadron fields

Expected behaviour of different semiconductor materials in hadron fields

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