Abstract:Large-scale molecular dynamics (MD) simulations, along with bond-order interatomic potentials, have been employed to study defect production, clustering and their evolution within high energy displacement cascades in semiconductors. Based on the MD results, the damage density within a cascade core is evaluated, and used to describe a new energy partition function. In addition, we have further developed a model to determine the non-ionizing energy loss (NIEL) for semiconductors, which can be used to predict the displacement damage degradation induced by space radiation on electronic components. The atomic-level based NIEL model has been applied to GaAs and GaN. At low energies, the most surviving defects are single interstitials and vacancies, and only 20% of the interstitial population is contained in clusters in GaAs, but a direct-impact amorphization in GaAs occurs with a high degree of probability during the cascade lifetime for Ga PKAs (primary knock-on atoms) with energies higher than 2 keV. However, a large number of atoms will be displaced during the collisional phase with a compacted cascade volume in GaN, and consequently, a great number of displaced atoms recombine significantly with vacancies at the same time, i.e., a pseudo-metallic behavior (PMB). This leads to the result that the majority of surviving defects are just single interstitials or vacancies for all recoil energies considered with only a small number of defects forming clusters. The total number of defects simulated in GaN can be very well predicted by the simplied Norgett, Robison and Torrens (NRT) formula due to the PMB, in contrast to GaAs where the defect number becomes much larger than the NRT value. The calculated NIEL in GaN is often found smaller than that predicted by a model based on the simple Kinchin-Pease formula. The comparisons of defect creation, density and effective NIEL in GaN to those of GaAs suggest that GaN may be much more resistant to displacement damage than GaAs, and therefore, very suitable for use in high-power space-energy systems and space-probe applications.

Predictions about the behaviour of diamond, silicon, SiC and some AIIIBV semiconductor materials in hadron fields

Expected behaviour of different semiconductor materials in hadron fields

SPM Bulletin 15

Silicon detectors: Damage, modelling and expected long-time behaviour in physics experiments at ultra high energy

Long-term damage induced by hadrons in silicon detectors for uses at the LHC-accelerator and in space missions

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Interactions between Terrestrial Cosmic-Ray Neutrons and III–V Compound Semiconductors

Comparison of Silicon, Germanium, Gallium Nitride, and Diamond for using as a detector material in experimental high energy physics

Atomic-level based non-ionizing energy loss: an application to GaAs and GaN semiconductor materials

Localization and extinction of bacterial populations under inhomogeneous growth conditions

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Signal and noise of Diamond Pixel Detectors at High Radiation Fluences

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3-D thermal and radiation-matter interaction simulations of a SiC solid-state detector for neutron flux measurements in JSI TRIGA Mark II research reactor

Very-High-Energy Heavy Ion Beam Dosimetry using Solid State Detectors for Electronics Testing

Neutron damage of chemical vapour deposition diamond

Displacement damage and total ionisation dose effects on 4H‐SiC power devices