Abstract:Large-scale molecular dynamics (MD) simulations, along with bond-order interatomic potentials, have been employed to study defect production, clustering and their evolution within high energy displacement cascades in semiconductors. Based on the MD results, the damage density within a cascade core is evaluated, and used to describe a new energy partition function. In addition, we have further developed a model to determine the non-ionizing energy loss (NIEL) for semiconductors, which can be used to predict the displacement damage degradation induced by space radiation on electronic components. The atomic-level based NIEL model has been applied to GaAs and GaN. At low energies, the most surviving defects are single interstitials and vacancies, and only 20% of the interstitial population is contained in clusters in GaAs, but a direct-impact amorphization in GaAs occurs with a high degree of probability during the cascade lifetime for Ga PKAs (primary knock-on atoms) with energies higher than 2 keV. However, a large number of atoms will be displaced during the collisional phase with a compacted cascade volume in GaN, and consequently, a great number of displaced atoms recombine significantly with vacancies at the same time, i.e., a pseudo-metallic behavior (PMB). This leads to the result that the majority of surviving defects are just single interstitials or vacancies for all recoil energies considered with only a small number of defects forming clusters. The total number of defects simulated in GaN can be very well predicted by the simplied Norgett, Robison and Torrens (NRT) formula due to the PMB, in contrast to GaAs where the defect number becomes much larger than the NRT value. The calculated NIEL in GaN is often found smaller than that predicted by a model based on the simple Kinchin-Pease formula. The comparisons of defect creation, density and effective NIEL in GaN to those of GaAs suggest that GaN may be much more resistant to displacement damage than GaAs, and therefore, very suitable for use in high-power space-energy systems and space-probe applications.

Expected behaviour of different semiconductor materials in hadron fields

Predictions about the behaviour of diamond, silicon, SiC and some AIIIBV semiconductor materials in hadron fields

SPM Bulletin 15

Long-term damage induced by hadrons in silicon detectors for uses at the LHC-accelerator and in space missions

Silicon detectors: Damage, modelling and expected long-time behaviour in physics experiments at ultra high energy

Interactions between Terrestrial Cosmic-Ray Neutrons and III–V Compound Semiconductors

Electrical-modelling, design and simulation of cumulative radiation effects in semiconductor pixels detectors: prospects and limits

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

Atomic-level based non-ionizing energy loss: an application to GaAs and GaN semiconductor materials

Irradiation Tests and Expected Performance of Readout Electronics of the ATLAS Hadronic Endcap Calorimeter for the HL-LHC

Radiation Hardness Property of Ultra-Fast 3D-Trench Electrode Silicon Detector on N-Type Substrate

Radiation Damage in Silicon Detectors Caused by Hadronic and Electromagnetic Irradiation

Amorphous silicon detectors for proton beam monitoring in FLASH radiotherapy

Systematic study related to the role of initial impurities and irradiation rates in the formation and evolution of complex defects in silicon for detectors in HEP experiments

Localization and extinction of bacterial populations under inhomogeneous growth conditions

Neutron and proton tests of different technologies for the upgrade of the cold readout electronics of the ATLAS Hadronic End-cap Calorimeter

5.5 MeV Electron Irradiation-Induced Transformation of Minority Carrier Traps in p-Type Si and Si1-xGex Alloys

TCAD Simulations of Radiation Damage in 4H-SiC

Isothermal annealing of radiation defects in bulk material of diodes from 8" silicon wafers

A Method to Simulate the Observed Surface Properties of Proton Irradiated Silicon Strip Sensors

Comparison of Silicon, Germanium, Gallium Nitride, and Diamond for using as a detector material in experimental high energy physics