Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

A Review of the Effects of Fast-Neutron Irradiation on the Performance of 4H-SiC Schottky Barrier Detectors

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

The fast neutron response of 4H silicon carbide semiconductor radiation detectors

Neutron irradiation and polarization effect of 4H-SiC Schottky detector

Investigation of the Performance Degradation of 4H-SiC Neutron Detectors Using MCNP and TCAD

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

Effects of 10 keV Electron Irradiation on the Performance Degradation of SiC Schottky Diode Radiation Detectors

Temperature Effects of Nuclear and Electronic Stopping Power on Si and C Radiation Damage in 3C-SiC

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Electrical characteristics and deep-level transient spectroscopy of a fast-neutron-irradiated 4H–SiC Schottky barrier diode

Radiation Damage by Heavy Ions in Silicon and Silicon Carbide Detectors

TCAD Simulations of Radiation Damage in 4H-SiC

TCAD modeling of radiation-induced defects in 4H-SiC diodes

High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

SiC detectors: A review on the use of silicon carbide as radiation detection material

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Radiation hardness of self-powered Si/SiC heterojunction detector under neutron irradiation

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature