Temperature Effects of Nuclear and Electronic Stopping Power on Si and C Radiation Damage in 3C-SiC

Ewelina Kucal,Przemysław Jóźwik,Cyprian Mieszczyński,René Heller,Shavkat Akhmadaliev,Christian Dufour,Konrad Czerski

DOI: https://doi.org/10.3390/ma17122843

IF: 3.4

2024-06-12

Materials

Abstract:Silicon carbide has been considered a material for use in the construction of advanced high-temperature nuclear reactors. However, one of the most important design issues for future reactors is the development of structural defects in SiC under a strong irradiation field at high temperatures. To understand how high temperatures affect radiation damage, SiC single crystals were irradiated at room temperature and after being heated to 800 °C with carbon and silicon ions of energies ranging between 0.5 and 21 MeV. The number of displaced atoms and the disorder parameters have been estimated by using the channeling Rutherford backscattering spectrometry. The experimentally determined depth profiles of induced defects at room temperature agree very well with theoretical calculations assuming its proportionality to the electronic and nuclear-stopping power values. On the other hand, a significant reduction in the number of crystal defects was observed for irradiations performed at high temperatures or for samples annealed after irradiation. Additionally, indications of saturation of the crystal defect concentration were observed for higher fluences and the irradiation of previously defected samples.

materials science, multidisciplinary,metallurgy & metallurgical engineering,physics, applied,chemistry, physical, condensed matter

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: understanding the coupling effects of nuclear energy deposition and electron energy deposition on the radiation damage of SiC (silicon carbide) under different temperature conditions. Specifically, the research objective is to explore how nuclear energy deposition and electron energy deposition jointly affect the generation and evolution of crystal defects during ion irradiation, especially the repair mechanism at high - temperature conditions.

### The core problems of the paper are decomposed as follows:

1. **Coupling Effects of Nuclear Energy Deposition and Electron Energy Deposition**
- Research the interaction between nuclear stopping power and electronic stopping power during ion irradiation.
- Explore how they jointly affect the defect formation and evolution in SiC materials.

2. **Effect of Temperature on Radiation Damage**
- Compare the effects of irradiation on SiC crystal defects at room temperature (RT) and high temperature (HT, 800°C).
- Analyze whether high temperature can reduce the number of defects caused by irradiation and explore the underlying physical mechanisms.

3. **Defect Saturation Phenomenon**
- Research whether defects will reach a saturation state under high - dose irradiation.
- Explore the reasons for the defect saturation phenomenon, for example, whether there is self - annealing behavior at high doses.

4. **Application of Thermal Spike Model**
- Use the thermal spike model to simulate the role of electron - phonon coupling in defect repair.
- Evaluate the effect of temperature increase on defect repair, especially the role of local high temperature in a short time.

5. **Combination of Experimental Verification and Theoretical Calculation**
- Use Rutherford backscattering/channeling spectroscopy (RBS/C) to analyze the defect distribution of irradiated samples.
- Compare the experimental results with SRIM simulations and Monte Carlo simulations to verify the accuracy of the theoretical model.

### Formula Summary:
The key formulas involved in the paper include:
1. **Diffusion Equation of Thermal Spike Model**:
- Temperature change in the electron system:
$$
C_e(T_e)\frac{\partial T_e}{\partial t} = \frac{1}{r}\frac{\partial}{\partial r}\left(rK_e(T_e)\frac{\partial T_e}{\partial r}\right) - g(T_e - T_a) + A(r,t)
$$
- Temperature change in the atomic system:
$$
C_a(T_a)\frac{\partial T_a}{\partial t} = \frac{1}{r}\frac{\partial}{\partial r}\left(rK_a(T_a)\frac{\partial T_a}{\partial r}\right) + g(T_e - T_a)
$$
- Where:
- $C_e, C_a$: Electron and lattice specific heat
- $K_e, K_a$: Electron and lattice thermal conductivity
- $g$: Electron - phonon coupling strength

2. **Energy Deposition Function**:
- Energy deposition distribution:
$$
A(r,t) = bS_ee^{-(t - t_0)^2/2s^2}F(r)
$$
- Where:
- $b$: Normalization factor
- $S_e$: Total electron energy loss
- $t_0$: Energy deposition time
- $s$: Half - width of Gaussian distribution
- $F(r)$: Radial energy distribution

Through the above research, the paper aims to provide theoretical support and technical guidance for the design of SiC materials in future high - temperature nuclear reactors.