Abstract:Silicon carbide(SiC)is an important material for shielding nuclear fission products in tri-structural isotropic(TRISO)particles for high-temperature gas-cooled reactors.It has an important influence on the safety performance of TRISO particles.Therefore,it is necessary to study the irradiation behaviors and mechanical properties of the SiC layer of TRISO particles.The irradiation process and nanoindentation process can be described accurately by molecular dynamics simulations.It is helpful to analyze the irradiation behavior and mechanical properties of materials.In this paper,molecular dynamics simulations were used to study the irradiation behavior of equiaxed polycrys-talline and long-axis polycrystalline SiC layers obtained from experiments.The calculat-ed theoretical values of the irradiation swelling degree and mechanical properties of the SiC layer are in good agreement with the experimental values.It shows the strong appli-cability of the potential functions and other simulation system parameters used in this paper.The irradiation behavior of the SiC layer was studied in detail by swelling degree,density,atomic structure type,and point defect evolution.The results show that the grain structure of the SiC layer has no significant effect on its irradiation swelling and amorphization.The amorphization is not directly converted from the crystal structure to the amorphous structure during the irradiation process.The crystal structure is conver-ted into an intermediate state structure and then converted into an amorphous structure.The point defects are mainly C vacancies,Si interstitial atoms,and C antisite atoms in the early stage of irradiation.The difference between the ratio of C point defects and Si point defects gradually disappears after the irradiation dose tends to be saturated.The evolution of amorphization and point defects tends to start nearby the grain boundaries.Irradiation reduces the mechanical properties of SiC layers.It no longer has a significant effect on the mechanical properties of the SiC layer after the irradiation dose tends to be saturated.The changes in the mechanical properties of the SiC layer before and after irradiation were analyzed by load-depth curve and stress & strain.The results show that the decrease in mechanical properties of the SiC layer is closely related to the mechanical behaviors under external force.For example,the bearing capacity and plastic deforma-tion degree decrease,and the stress & strain distribution are disordered.The results provide a quantitative explanation for the irradiation behavior of the SiC layer of TRISO particles and the change of mechanical properties under irradiation.It is helpful to understand the irradiation behavior and relationship between the irradiation behavior and mechanical properties of the SiC layer.

Primary Radiation Damage in 3C-Sic under Strain Field Studied with Molecular Dynamics Simulation

Effect of Uniaxial Stress on the Threshold Displacement Energy of Silicon Carbide

A Multi-Scale Simulation Study of Irradiation Swelling of Silicon Carbide

Molecular dynamics simulation of displacement cascades in cubic silicon carbide

Molecular Dynamics Simulation of Irradiation Damage of Sic/Gra/Sic Composites

Molecular Dynamics Simulation of Irradiation Behaviors and Mechanical Properties of SiC Layer of TRISO Particles

Molecular Dynamics Study of Cascade Damage at Sic/C Interface

In-situ Observation of Damage Evolution in Mo-SiCf/SiC Heterogeneous Composite

Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC

Modeling of long-term defect evolution in heavy-ion irradiated 3C-SiC: Mechanism for thermal annealing and influences of spatial correlation

In situ high-temperature 3D imaging of the damage evolution in a SiC nuclear-fuel cladding material

Ab Initio Molecular Dynamics Simulation of the Effects of Stacking Faults on the Radiation Response of 3C-Sic

Influence of Applied Tensile/Compressive Stress on He-Irradiated SiC: Examining Defect Evolution Through Experimental Investigation and DFT Simulations

Molecular Dynamics Study on Thermal Conductivity of Unirradiated and Irradiated Symmetrical Tilt Grain Boundary 3C-Sic

Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC

Atomistic Simulations of the Mechanical Deformation of Irradiation-Amorphized Silicon Carbide

Molecular dynamics simulations of irradiation cascades in alpha-zirconium under macroscopic strain

Effects of Applied Strain on Defect Production and Clustering in FCC Ni

Effect of Applied Strain on Radiation Damage in CoCrFeNi Concentrated Solid Solution Alloys: Insights from Molecular Dynamics Simulations

Mechanical and optical property assessment of irradiated SiC with displaced atoms

Evolution of Defects and Defect Clusters in β-SiC Irradiated at High Temperature