Abstract:The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (Vd) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. Vd was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 1018 cm−3 occurs at an irradiation dose of ∼1.1 × 1016 cm−2. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

Role of Low-Temperature Annealing in Modifying Silicon Carbide by Beams of Charged Particles

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Ionization-induced annealing of pre-existing defects in silicon carbide

Irradiation and annealing of p-type silicon carbide

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation

Transient Scanning Electron Beam Annealing Methods Used to Study Diffusion and Defects in Implanted Silicon

Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range

Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Temperature Effects of Nuclear and Electronic Stopping Power on Si and C Radiation Damage in 3C-SiC

Displacement damage and total ionisation dose effects on 4H‐SiC power devices

Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Recovery at room temperature annealing on 4H–SiC SBDs by gamma irradiation

Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers

Effects of annealing on carrier lifetime in 4H-SiC

Effects of the Annealing Temperature on Ni Silicide/n-Si(100) Schottky Contacts

Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation